Add to ORKGThe high-voltage and high-temperature capabilities of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to find applications in extreme radiation environments. This paper reports the first investigation into the effects of ionizing radiation on Ga2O3 MOSFETs. The devices remained fully functional after exposure to a cumulative gamma-ray (γ-ray) dose of 1 MGy(SiO2). High γ-ray tolerancewas demonstrated for the bulk Ga2O3 channel by virtue of the MOSFETs’ stable DC output characteristics against irradiation. Radiation-induced degradations in the gate insulation and surface passivation were found to limit the overall radiation resistance of these devices.第78回応用物理学会秋季学術講演
Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSF...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. Th...
The effects of ionizing radiation on b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOS...
β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-th...
β-Ga2O3 is being actively pursued for power switching and harsh environment electronics owing to its...
β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-th...
Ga2O3 has emerged as a noteworthy ultrawide bandgap semiconductor in the past five years. Owing to e...
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide range of comp...
Introduction. Electromagnetic or ionizing radiation (IO) has great influence for radiation resistanc...
The pursuit of Ga2O3 as an ultra-wide-bandgap (4.5–4.9 eV) semiconductor for next-generation power-s...
Gallium oxide (Ga2O3) is expected to have high radiation tolerance owing to their strong bond streng...
In this article, we investigate the Single Events Effects (SEE) leading to Single Event Burnout (SEB...
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSF...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. Th...
The effects of ionizing radiation on b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOS...
β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-th...
β-Ga2O3 is being actively pursued for power switching and harsh environment electronics owing to its...
β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-th...
Ga2O3 has emerged as a noteworthy ultrawide bandgap semiconductor in the past five years. Owing to e...
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide range of comp...
Introduction. Electromagnetic or ionizing radiation (IO) has great influence for radiation resistanc...
The pursuit of Ga2O3 as an ultra-wide-bandgap (4.5–4.9 eV) semiconductor for next-generation power-s...
Gallium oxide (Ga2O3) is expected to have high radiation tolerance owing to their strong bond streng...
In this article, we investigate the Single Events Effects (SEE) leading to Single Event Burnout (SEB...
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSF...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. Th...