Add to ORKGIn-plain pi(n-)n diodes were fabricated on n-type epitaxial 4H-SiC layer grown on a n-type 4H-SiC substrate. As a result of confocal photoluminescence measurements, two types of single photon sources were observed in n-type region of 4H-SiC pin diodesInternational Union of Materials Research Societies, The 15th International Conference on Advanced Materials (IUMRS-ICAM2017
Generation of single photons has been demonstrated in several systems. However, none of them satisfi...
Color centers in silicon carbide have recently emerged as one of the most promising emitters for bri...
Single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) ...
Luminescence centers formed in the vicinity of SiC surface are expected to be utilized as Single Pho...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
© 2016 Dr. Alexander LohrmannSingle-photon sources are considered a key component for future quantum...
Single photon source (SPS) providing nonclassical light states on demand is one of the key technolog...
Electrically driven single-photon emitting devices have immediate applications in quantum cryptograp...
This paper summarizes key findings in single-photon generation from deep level defects in silicon ca...
We report the first observation of stable single photon sources in an electronic and photonic device...
The major barrier for optical quantum information technologies is the absence of reliable single pho...
4H-SiC pin-diodes are fabricated and the surface SPSs formed in the pin diodes are investigated usin...
Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such a...
Defects are common in many materials and some were regarded for years as detrimental. Recently with ...
We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor fieldeffect tra...
Generation of single photons has been demonstrated in several systems. However, none of them satisfi...
Color centers in silicon carbide have recently emerged as one of the most promising emitters for bri...
Single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) ...
Luminescence centers formed in the vicinity of SiC surface are expected to be utilized as Single Pho...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
© 2016 Dr. Alexander LohrmannSingle-photon sources are considered a key component for future quantum...
Single photon source (SPS) providing nonclassical light states on demand is one of the key technolog...
Electrically driven single-photon emitting devices have immediate applications in quantum cryptograp...
This paper summarizes key findings in single-photon generation from deep level defects in silicon ca...
We report the first observation of stable single photon sources in an electronic and photonic device...
The major barrier for optical quantum information technologies is the absence of reliable single pho...
4H-SiC pin-diodes are fabricated and the surface SPSs formed in the pin diodes are investigated usin...
Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such a...
Defects are common in many materials and some were regarded for years as detrimental. Recently with ...
We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor fieldeffect tra...
Generation of single photons has been demonstrated in several systems. However, none of them satisfi...
Color centers in silicon carbide have recently emerged as one of the most promising emitters for bri...
Single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) ...