Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

This paper studies the electrically active deep level defects introduced in epitaxial n-type 4H-SiC layers by epithermal and fast neutrons, using Laplace Deep Level Transient Spectroscopy (Laplace DLTS). While the deep level related to the carbon vacancy has been observed in as-grown material, we observed that epithermal and fast neutrons create additional point defects with energy levels at Ec below 0.40 eV and Ec below 0.70 eV