Creation and Functionalization of Defects in SiC by Proton Beam Writing

Proton beam writing (PBW) a with 1.7 MeV proton micro beam was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC were investigated. A peak around 900 nm associated with the silicon vacancy was observed for the irradiated SiC without any post-implantation annealing. The overall depth profile of photon counts detected from irradiatedareas is in good agreement with simulated vacancy depth profile. Since the silicon vacancy is known as a single photon source with a spin that can be controlled at room temperature, PBW is expected to be a useful tool to fabricate spin qubits