An epitaxially grown Mn72Ge28 film with a tetragonal crystal structure was fabricated. It was clarified that the film had a perpendicular magnetization and a high perpendicular magnetic anisotropy energy of 14.3Merg/cm3. The electronic structure was investigated by X-ray magnetic circular dichroism and hard X-ray photoelectron spectroscopy. The obtained X-ray magnetic circular dichroism spectrum revealed that the Mn orbital magnetic moment governed the magnetocrystalline anisotropy of the Mn72Ge28 film. A doublet structure was observed for the Mn 2p3/2 peak of hard X-ray photoelectron spectrum, indicating the spin exchange interaction between the 2p core-hole and 3d valence electrons.© 2018 The Japan Society of Applied Physic
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Journal ArticleWe have measured the x-ray absorption and x-ray magnetic circular dichroism (XMCD) at...
International audienceThe room-temperature ferromagnetic behavior of MnAs/GaAs(001) thin film has be...
Epitaxial thin films of the half-metallic X{sub a}-compound Mn{sub 2}CoGa (Hg{sub 2}CuTi prototype) ...
International audienceAn investigation of the structural, magnetic and electronic properties of ≈ 3 ...
We present a valence-state model to explain the characteristics of a recently observed pre-edge feat...
Journal ArticleWe have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XM...
Meinert M, Schmalhorst J-M, Klewe C, et al. Itinerant and localized magnetic moments in ferrimagneti...
Magnetic Weyl semimetals are newly discovered quantum materials with the potential for use in spintr...
This work reports on the measurement of magnetic dichroism in angular-resolved photoelectron spectro...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
The electronic structure of the (Ge,Mn)Te diluted magnetic semiconductors was investigated theoretic...
Magnetic Weyl semimetals are newly discovered quantum materials with the potential for use in spintr...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...