Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiatio
International audienceThe paper investigates radiation-induced switching mechanisms, temperature eff...
Graduation date: 2013Access restricted to OSU community at author's request from Sept. 11, 2012 - Se...
Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les ...
The effect of disorder caused by MeV heavy ion irradiation on the tunnel magnetoresistance (TMR) of ...
The 28 nm system-on-chip (SoC) was irradiated by 12 MeV electron at the China Institute of Atomic En...
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concer...
International audienceThis chapter surveys soft errors induced by natural radiation on advanced comp...
It is well known that alpha particles cause soft errors in LSI. Recently, it has been found that cos...
The magnetic tunnel junction is a memory device at the core of emerging magnetic random access memor...
Soft errors due to neutrons and alpha particles are among the main threats for the reliability of di...
This paper is under in-depth investigation due to suspicion of possible plagiarism on a high similar...
Frontiers in Electronic Testing, Vol. 41, 1st Edition., XVIIISoft Errors in Modern Electronic System...
In the atmosphere, it is generally understood that neutrons are the main contributor to the soft err...
Abstract—This paper discusses soft error immunity of sub-threshold SRAM presenting neutron- and alph...
Schmalhorst J-M, Hoink V, Reiss G, et al. Influence of ion bombardment on transport properties and e...
International audienceThe paper investigates radiation-induced switching mechanisms, temperature eff...
Graduation date: 2013Access restricted to OSU community at author's request from Sept. 11, 2012 - Se...
Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les ...
The effect of disorder caused by MeV heavy ion irradiation on the tunnel magnetoresistance (TMR) of ...
The 28 nm system-on-chip (SoC) was irradiated by 12 MeV electron at the China Institute of Atomic En...
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concer...
International audienceThis chapter surveys soft errors induced by natural radiation on advanced comp...
It is well known that alpha particles cause soft errors in LSI. Recently, it has been found that cos...
The magnetic tunnel junction is a memory device at the core of emerging magnetic random access memor...
Soft errors due to neutrons and alpha particles are among the main threats for the reliability of di...
This paper is under in-depth investigation due to suspicion of possible plagiarism on a high similar...
Frontiers in Electronic Testing, Vol. 41, 1st Edition., XVIIISoft Errors in Modern Electronic System...
In the atmosphere, it is generally understood that neutrons are the main contributor to the soft err...
Abstract—This paper discusses soft error immunity of sub-threshold SRAM presenting neutron- and alph...
Schmalhorst J-M, Hoink V, Reiss G, et al. Influence of ion bombardment on transport properties and e...
International audienceThe paper investigates radiation-induced switching mechanisms, temperature eff...
Graduation date: 2013Access restricted to OSU community at author's request from Sept. 11, 2012 - Se...
Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les ...
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