In situ X-ray diffraction of GaAs/MnSb/Ga(In)As heterostructures
- J. Mousley P.
- W. Burrows C.
- J. Ashwin M.
- 高橋 正光
- 佐々木 拓生
- R. Bell G.
Publication date
October 2016
DOI Publisher
Wiley Journal
physica status solidi (b)Abstract
The growth of GaAs on MnSb by molecular beam epitaxy (MBE) has been investigated. MnSb epilayers on GaAs(111), GaAs(001) and In0.5Ga0.5As(111) of thickness ∼ 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored using synchrotron X-ray diffraction and reflection high energy electron diffraction. The strain relaxation and growth mode of GaAs on MnSb are presented as well as the epitaxial relationship between GaAs and MnSb
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