The structural, magnetic and electronic properties of 2D VX2 (X = S, Se) monolayers and graphene/VX2 heterostructures were studied using a DFT+U approach. It was found that the stability of the 1T phasesof VX2 monolayers is linked to strong electron correlation effects. The study of vertical junctions comprising of graphene and VX2 monolayers demonstrated that interlayer interactions lead to theformation of strong spin polarization of both graphene and VX2 fragments while preserving the linear dispersion of graphene-originated bands. It was found that the insertion of Mo atoms between thelayers leads to n-doping of graphene with a selective transformation of graphene bands keeping the spin-down Dirac cone intact
In this dissertation different van der Waals heterostructures such as graphene-MoS2 and MoTe2-MoS2 w...
Since their discovery, graphene and other 2D materials have become a subject of intense research in ...
Electrostatic gating enables key functionality in modern electronic devices by altering the properti...
Proximity induced spin-orbit coupling effects in graphene on transition-metal dichalcogenides (TMD) ...
Two-dimensional materials and their van der Waals heterostructures offer unforeseen potential for el...
In the framework of first-principles calculations, we investigate the structural and electronic prop...
The concept of swapping the two most important spin interactions-exchange and spin-orbit coupling-is...
Graphene stands out for its high mobility and weak spin-orbit coupling (SOC) offering efficient tran...
Combining single - layer two - dimensional semiconducting transition metal dichalcogenides (TMDs) wi...
We investigate the proximity-induced spin-orbit coupling in heterostructures of twisted graphene and...
Due to the self-passivated and dangling bond free surfaces of two-dimensional (2D), a variety of ver...
Van der Waals (vdW) heterostructures consisting of bilayer graphene (BLG) encapsulated within monola...
The electronic and magnetic properties of graphene/MoS2 heterostructures intercalated with 3d transi...
International audienceCombining single-layer two-dimensional semiconducting transition-metal dichalc...
Due to its high room temperature electron mobility and long spin diffusion length, the two-dimension...
In this dissertation different van der Waals heterostructures such as graphene-MoS2 and MoTe2-MoS2 w...
Since their discovery, graphene and other 2D materials have become a subject of intense research in ...
Electrostatic gating enables key functionality in modern electronic devices by altering the properti...
Proximity induced spin-orbit coupling effects in graphene on transition-metal dichalcogenides (TMD) ...
Two-dimensional materials and their van der Waals heterostructures offer unforeseen potential for el...
In the framework of first-principles calculations, we investigate the structural and electronic prop...
The concept of swapping the two most important spin interactions-exchange and spin-orbit coupling-is...
Graphene stands out for its high mobility and weak spin-orbit coupling (SOC) offering efficient tran...
Combining single - layer two - dimensional semiconducting transition metal dichalcogenides (TMDs) wi...
We investigate the proximity-induced spin-orbit coupling in heterostructures of twisted graphene and...
Due to the self-passivated and dangling bond free surfaces of two-dimensional (2D), a variety of ver...
Van der Waals (vdW) heterostructures consisting of bilayer graphene (BLG) encapsulated within monola...
The electronic and magnetic properties of graphene/MoS2 heterostructures intercalated with 3d transi...
International audienceCombining single-layer two-dimensional semiconducting transition-metal dichalc...
Due to its high room temperature electron mobility and long spin diffusion length, the two-dimension...
In this dissertation different van der Waals heterostructures such as graphene-MoS2 and MoTe2-MoS2 w...
Since their discovery, graphene and other 2D materials have become a subject of intense research in ...
Electrostatic gating enables key functionality in modern electronic devices by altering the properti...