A model of partially-depleted SOI MOSFETs in the subthreshold range, Journal of Telecommunications and Information Technology, 2001, nr 1

A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusionbased conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the „pinch-off” region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed