To completely characterise the noise behaviour of a two port device, four noise parameters Fmin; Rn; Gopt ; and Bopt must be determined. This paper reports improvements in the uncertainty related to the above parameters, taking into account measurement errors due both to the limited instrument precision and connection repeatability. Results are reported for noise characterisation of 0.3 mmd -doped HEMT devices by Alenia, demonstrating as the common hot-cold measurement procedure can result with an error confidence as low as 0.2% for all the noise parameters
This paper proposes a new method for microwave two-port noise parameters values extraction. The meth...
A method for measuring FET noise parameters is presented. It is based on the determination of a dist...
Noise parameters are an electrical representation of the noise performance of transistors which is w...
To completely characterise the noise behaviour of a two port device, four noise parameters F-min, R-...
The assessment of uncertainties of a two-port noise parameters measurement, presented in the paper, ...
In this paper, we discuss the experimental determination of noise parameters for high-electron-mobil...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
Four parameters are necessary for a complete characterization of the noise behavior of a linear devi...
Abstract- Factors contributing to microwave noise parameter measure-ment accuracy have been examined...
Experimental facts about noise are presented which help us to understand the correlation between noi...
Abstract: Succession of problems in measuring the parameters of noise processes has been settled fol...
We present a novel method for device noise measurement, based on a two-channel cross-correlation tec...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
This paper proposes a new method for microwave two-port noise parameters values extraction. The meth...
A method for measuring FET noise parameters is presented. It is based on the determination of a dist...
Noise parameters are an electrical representation of the noise performance of transistors which is w...
To completely characterise the noise behaviour of a two port device, four noise parameters F-min, R-...
The assessment of uncertainties of a two-port noise parameters measurement, presented in the paper, ...
In this paper, we discuss the experimental determination of noise parameters for high-electron-mobil...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
Four parameters are necessary for a complete characterization of the noise behavior of a linear devi...
Abstract- Factors contributing to microwave noise parameter measure-ment accuracy have been examined...
Experimental facts about noise are presented which help us to understand the correlation between noi...
Abstract: Succession of problems in measuring the parameters of noise processes has been settled fol...
We present a novel method for device noise measurement, based on a two-channel cross-correlation tec...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
This paper proposes a new method for microwave two-port noise parameters values extraction. The meth...
A method for measuring FET noise parameters is presented. It is based on the determination of a dist...
Noise parameters are an electrical representation of the noise performance of transistors which is w...