The 100 W class A power amplifier for L-band T/R module, Journal of Telecommunications and Information Technology, 2002, nr 1

In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P1 dB > 49 dBm, linear gain jS21j > 10 dB, and transmitance deviations during the RF pulse: phase Darg(S21) < 0:9Æ and DPout < 0:2 dB