Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with the mobility and drain current obtained for the relaxed material. In the first step, our mobility model has been calibrated to the “universal mobility” according to the available experimental data for unstrained Si MOSFETS. Then, employing the mobility parameters derived in the calibration process, electron mobility and the drain current have been calculated for strained-Si MOSFETs
An analytical model describing the threshold voltage and drain current in strained-Si p-MOSFETs as a...
With a unified physics-based model linking MOSFET performance to carrier mobility and drive current,...
Abstract: Although cryptography constitutes a considerable part of the overall security architecture...
[[abstract]]A new mobility model, together with its extraction method for manufacturing strained-Si ...
Abstract—In this paper, we describe a simple method to ex-tract the average drift mobility and the a...
The metal-oxide-semiconductor field effect transistor (MOSFET) has been scaling down aggressively ov...
This paper reports a detailed experimental and simulation study of the electron mobility enhancement...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future genera...
septembre 2008Moniteur du CIES de GrenobleThe Metal-Oxide-Semiconductor-Field-Effect-Transistors (MO...
Mobility in advanced MOSFETs with strained ultra-thin silicon body is investigated. We use a two-ban...
As modern microelectronics advances, enormous challenges have to be overcome in order to further inc...
In this paper, we describe a simple method to extract the average drift mobility and the apparent sh...
A discussion over the microscopic electron mobility of strained InGaAs channels of metal-oxide-semic...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
An analytical model describing the threshold voltage and drain current in strained-Si p-MOSFETs as a...
With a unified physics-based model linking MOSFET performance to carrier mobility and drive current,...
Abstract: Although cryptography constitutes a considerable part of the overall security architecture...
[[abstract]]A new mobility model, together with its extraction method for manufacturing strained-Si ...
Abstract—In this paper, we describe a simple method to ex-tract the average drift mobility and the a...
The metal-oxide-semiconductor field effect transistor (MOSFET) has been scaling down aggressively ov...
This paper reports a detailed experimental and simulation study of the electron mobility enhancement...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future genera...
septembre 2008Moniteur du CIES de GrenobleThe Metal-Oxide-Semiconductor-Field-Effect-Transistors (MO...
Mobility in advanced MOSFETs with strained ultra-thin silicon body is investigated. We use a two-ban...
As modern microelectronics advances, enormous challenges have to be overcome in order to further inc...
In this paper, we describe a simple method to extract the average drift mobility and the apparent sh...
A discussion over the microscopic electron mobility of strained InGaAs channels of metal-oxide-semic...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
An analytical model describing the threshold voltage and drain current in strained-Si p-MOSFETs as a...
With a unified physics-based model linking MOSFET performance to carrier mobility and drive current,...
Abstract: Although cryptography constitutes a considerable part of the overall security architecture...