In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT device is presented. The primary target is to address system-level mixed signal multi-domain simulation where the simulation time is a key factor for the usefulness of results. The methodology adopted provides a model suitable for use on both SPICE-only simulators, where thermal behavior is mapped to electrical quantities, and on a multi-domain environment, where heterogeneous physical domains are managed by a simulation engine. A comparison with real device characteristics is presented to show model accuracy and finally a simulation of an inverter circuit is investigated to highlight achievable performances
International audienceThis paper presents a novel insulated gate bipolar transistor (IGBT) behaviora...
The thermal analysis and management is an important issue for power semiconductor devices especially...
This paper presents the application of advanced compact models of the IGBT and PIN diode to the full...
In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT...
An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliab...
Reverse Conducting IGBTs (RC-IGBTs) represent a valuable solution to increase power density in IGBT ...
Abstract: A novel IGBT electrothermal model is implemented for the first time in PSpice for the simu...
In this study, a comparison of various insulated gate bipolar transistor (IGBT) models for field-pro...
IGBTs are the most preferred power devices in medium power and frequency applications. Due to rapid ...
The IGBT model is improved to use in SPICE simulation program. The convergence problems of mathemati...
In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temper...
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation ...
The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed appr...
This paper presents the steps and the challenges for implementing analytical, physics-based models f...
Real-time simulation of modular multilevel converters (MMCs) is challenging due to their complex str...
International audienceThis paper presents a novel insulated gate bipolar transistor (IGBT) behaviora...
The thermal analysis and management is an important issue for power semiconductor devices especially...
This paper presents the application of advanced compact models of the IGBT and PIN diode to the full...
In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT...
An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliab...
Reverse Conducting IGBTs (RC-IGBTs) represent a valuable solution to increase power density in IGBT ...
Abstract: A novel IGBT electrothermal model is implemented for the first time in PSpice for the simu...
In this study, a comparison of various insulated gate bipolar transistor (IGBT) models for field-pro...
IGBTs are the most preferred power devices in medium power and frequency applications. Due to rapid ...
The IGBT model is improved to use in SPICE simulation program. The convergence problems of mathemati...
In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temper...
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation ...
The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed appr...
This paper presents the steps and the challenges for implementing analytical, physics-based models f...
Real-time simulation of modular multilevel converters (MMCs) is challenging due to their complex str...
International audienceThis paper presents a novel insulated gate bipolar transistor (IGBT) behaviora...
The thermal analysis and management is an important issue for power semiconductor devices especially...
This paper presents the application of advanced compact models of the IGBT and PIN diode to the full...