Add to ORKGA two-dimensional technique for the physical noise majority-carrier modeling of GaAs MESFETs is presented, based upon a computationally efficient 2D implementation of the impedance-field method. Preliminary results concerning an epitaxial device on a semi-insulating substrate are discussed
The- paper presents a case study on the technological optimization of GaAs MESFETs by means of a. tw...
A new physical model for GaAs MESFET drain current and gate capacitance based on the Chang-Fetterman...
We present an analytical procedure to perform the local noise analysis of a semiconductor junction w...
A novel, two-dimensional technique for the physical noise modeling of monopolar devices, based on th...
The authors present a computationally efficient unified approach to the numerical simulation of sens...
L'investigation traite de la relation entre bruit g-r et la dispersion de fréquence de l'impédance d...
The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. Af...
We present a 2-D physical simulator intended for the computer-aided-design of GaAs MESFETs. Numerica...
This thesis introduces a Monte Carlo simulation of intrinsic electronic noise in MOSFETs. Brief revi...
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effe...
Low-frequency noise of the MOSFET was simulated using the transfer impedance method together with a ...
Abstract-Two numerical models based on the impedance field method have been implemented to investiga...
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Se...
The- paper presents a case study on the technological optimization of GaAs MESFETs by means of a. tw...
A new physical model for GaAs MESFET drain current and gate capacitance based on the Chang-Fetterman...
We present an analytical procedure to perform the local noise analysis of a semiconductor junction w...
A novel, two-dimensional technique for the physical noise modeling of monopolar devices, based on th...
The authors present a computationally efficient unified approach to the numerical simulation of sens...
L'investigation traite de la relation entre bruit g-r et la dispersion de fréquence de l'impédance d...
The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. Af...
We present a 2-D physical simulator intended for the computer-aided-design of GaAs MESFETs. Numerica...
This thesis introduces a Monte Carlo simulation of intrinsic electronic noise in MOSFETs. Brief revi...
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effe...
Low-frequency noise of the MOSFET was simulated using the transfer impedance method together with a ...
Abstract-Two numerical models based on the impedance field method have been implemented to investiga...
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Se...
The- paper presents a case study on the technological optimization of GaAs MESFETs by means of a. tw...
A new physical model for GaAs MESFET drain current and gate capacitance based on the Chang-Fetterman...
We present an analytical procedure to perform the local noise analysis of a semiconductor junction w...