A novel, two-dimensional technique for the physical noise modeling of monopolar devices, based on the impedance-field method, is presented. The impedance field is computed by means of an efficient approach based on the introduction of an adjoint problem, according to a method already successfully applied to noise analysis in lumped networks. The same approach can also be used for computing device sensitivities with respect to parameter variations. As an example, preliminary results are discussed relative to the application of the method to GaAs MESFET
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
L'investigation traite de la relation entre bruit g-r et la dispersion de fréquence de l'impédance d...
This paper presents a new approach for the definition and identification of a transistor model suita...
The authors present a computationally efficient unified approach to the numerical simulation of sens...
A two-dimensional technique for the physical noise majority-carrier modeling of GaAs MESFETs is pres...
We present an analytical procedure to perform the local noise analysis of a semiconductor junction w...
The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. Af...
This paper presents a general method for the calculation of the noise correlation matrix of devices ...
A new method for the determination of a distributed FET noise model is presented. It is based on the...
The simultaneous switching noise (SSN) in a multilayer power delivery network (PDN) is a critical pr...
Because of their high performance, Metal-Semiconductor Field Effect Transistors (MESFETs) and High-E...
Abstract-Two numerical models based on the impedance field method have been implemented to investiga...
The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated a...
Abstract—In this paper, a new method is proposed to estimate the simultaneous switching noise (SSN) ...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
L'investigation traite de la relation entre bruit g-r et la dispersion de fréquence de l'impédance d...
This paper presents a new approach for the definition and identification of a transistor model suita...
The authors present a computationally efficient unified approach to the numerical simulation of sens...
A two-dimensional technique for the physical noise majority-carrier modeling of GaAs MESFETs is pres...
We present an analytical procedure to perform the local noise analysis of a semiconductor junction w...
The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. Af...
This paper presents a general method for the calculation of the noise correlation matrix of devices ...
A new method for the determination of a distributed FET noise model is presented. It is based on the...
The simultaneous switching noise (SSN) in a multilayer power delivery network (PDN) is a critical pr...
Because of their high performance, Metal-Semiconductor Field Effect Transistors (MESFETs) and High-E...
Abstract-Two numerical models based on the impedance field method have been implemented to investiga...
The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated a...
Abstract—In this paper, a new method is proposed to estimate the simultaneous switching noise (SSN) ...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
L'investigation traite de la relation entre bruit g-r et la dispersion de fréquence de l'impédance d...
This paper presents a new approach for the definition and identification of a transistor model suita...