A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presented. The theoretical approach is based on a Monte Carlo simulation of the coupled free-carrier and exciton dynamics, and includes various mechanisms contributing to exciton formation and relaxation. Our investigation clarifies the origin of excitonic luminescence in time-resolved experiments. In particular, we address the problem of the relative efficiencies of exciton formation assisted by either LO phonons or acoustic phonons, respectively
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
The energy relaxation of coupled free-carrier and exciton populations in semiconductors after low-de...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We fo...
We present the results of a detailed time-resolved luminescence study carried out on a very high qua...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
The energy relaxation of coupled free-carrier and exciton populations in semiconductors after low-de...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We fo...
We present the results of a detailed time-resolved luminescence study carried out on a very high qua...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...