A systematic analysis of the influence of the capture, inter-level relaxation and exciton dephasing time constants on the dynamic behavior of quantum dot Fabry-Perot semiconductor lasers is done taking into account the lasing from the ground and excited states. The simulation results show that the carrier time constants studied influence significantly the static characteristic of the laser, its switch-on response and the pulses generated by gain-switching
We report a systematic analysis of multi-mode dynamics and in Quantum Dot single section lasers usin...
Direct capture of carriers from the wetting layer to the most confined states is discussed in this p...
International audienceTaking into account the carrier dynamics in the wetting layer, excited state a...
Theor. anal. of carrier dynamics in quantum dot lasers is presented, particularly with regard to the...
We analyze the impact of slow intraband relaxation and strong carrier localization on the characteri...
In this work, a theoretical model for the description of carrier and light dynamics in a quantum dot...
The dynamics of optical gain in semiconductor quantum dots (QDs) was investigated. Simple anal. expr...
In this paper we investigate with numerical simulations the rich multi-mode dynamics of Quantum Dot ...
We present a multi-population rate equation model for the analysis of the static and dynamic charact...
textSelf-organized quantum dots provide unique atomic-like density of states and have important app...
The optical modulation properties of a semiconductor quantum-dot laser, as observed under optical in...
We present analytic treatment of the three different dynamic regimes found in quantum-dot laser turn...
A dynamic model of passive mode-locking in quantum-dot laser diodes is presented. It is found that i...
We report a systematic analysis of multi-mode dynamics and in Quantum Dot single section lasers usin...
Direct capture of carriers from the wetting layer to the most confined states is discussed in this p...
International audienceTaking into account the carrier dynamics in the wetting layer, excited state a...
Theor. anal. of carrier dynamics in quantum dot lasers is presented, particularly with regard to the...
We analyze the impact of slow intraband relaxation and strong carrier localization on the characteri...
In this work, a theoretical model for the description of carrier and light dynamics in a quantum dot...
The dynamics of optical gain in semiconductor quantum dots (QDs) was investigated. Simple anal. expr...
In this paper we investigate with numerical simulations the rich multi-mode dynamics of Quantum Dot ...
We present a multi-population rate equation model for the analysis of the static and dynamic charact...
textSelf-organized quantum dots provide unique atomic-like density of states and have important app...
The optical modulation properties of a semiconductor quantum-dot laser, as observed under optical in...
We present analytic treatment of the three different dynamic regimes found in quantum-dot laser turn...
A dynamic model of passive mode-locking in quantum-dot laser diodes is presented. It is found that i...
We report a systematic analysis of multi-mode dynamics and in Quantum Dot single section lasers usin...
Direct capture of carriers from the wetting layer to the most confined states is discussed in this p...
International audienceTaking into account the carrier dynamics in the wetting layer, excited state a...