We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-principles molecular dynamics. We discuss the interface with vacuum, and the role played by surface reconstruction in SiC homoepitaxy, and adatom diffusion. Then we move to the description of a buried, highly mismatched semiconductor interface, the one which occurs between SiC and Si, its natural substrate for growth: in this case, the mechanism governing the creation of a network of dislocations at the SiC/Si interface is presented, along with a microscopic description of the dislocation core. Finally, we describe a template solid/liquid interface, water on SiC: based on the predicted structure of SiC surfaces covered with water molecul...
Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition lay...
We investigate the kinetic behavior of a single C adatom on the 1a3 X 1a3 \u3b2-SiC(111) surface b...
International audienceIt has been shown that the first C layer on the SiC(0001)(2×2)C surface alread...
We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-pr...
Abstract. In this paper, we will review some recent investigations on extended defects in cubic SiC,...
The interaction of water with Si- and C- terminated beta-SiC(001) surfaces was investigated by means...
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (...
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (...
International audienceIn this letter, we explore the potential energy surface (PES) of the 3×3 C-fac...
We have performed molecular dynamics simulations of thin layers of SiC on Si substrates to determine...
Silicon carbide (SiC) semiconductor devices are expected to be used in severe environments such as o...
We report the results of first principles molecular dynamics simulations of the adsorption of Si and...
We have performed molecular dynamics simulations to determine the adsorption and diffusion activatio...
Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition lay...
We investigate the kinetic behavior of a single C adatom on the 1a3 X 1a3 \u3b2-SiC(111) surface b...
International audienceIt has been shown that the first C layer on the SiC(0001)(2×2)C surface alread...
We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-pr...
Abstract. In this paper, we will review some recent investigations on extended defects in cubic SiC,...
The interaction of water with Si- and C- terminated beta-SiC(001) surfaces was investigated by means...
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (...
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (...
International audienceIn this letter, we explore the potential energy surface (PES) of the 3×3 C-fac...
We have performed molecular dynamics simulations of thin layers of SiC on Si substrates to determine...
Silicon carbide (SiC) semiconductor devices are expected to be used in severe environments such as o...
We report the results of first principles molecular dynamics simulations of the adsorption of Si and...
We have performed molecular dynamics simulations to determine the adsorption and diffusion activatio...
Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition lay...
We investigate the kinetic behavior of a single C adatom on the 1a3 X 1a3 \u3b2-SiC(111) surface b...
International audienceIt has been shown that the first C layer on the SiC(0001)(2×2)C surface alread...