A microscopic analysis of non-equilibrium phenomena in unipolar quantum devices is presented. In particular, a global Monte Carlo simulation scheme (semiclassical as well as quantum) is employed, which allows us to directly access details of the three-dimensional carrier dynamics, without resorting to phenomenological parameters. Applications to state-of-the-art mid-infrared quantum-cascade lasers and novel far-infrared emitters are discussed. The extremely good agreement between theoretical results and experimental findings demonstrates that our approach is a valid and predictive tool for the understanding of charge transport in these quantum devices
A microscopic investigation of hot-carrier vertical transport phenomena in semiconductor-based infra...
The first global quantum simulation of semiconductor-based quantum-cascade lasers is presented. Our ...
Quantum cascade lasers can be modeled within a hierarchy of different approaches: Standard rate equa...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
A microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices is ...
Semiconductor-based optoelectronic quantum devices are new-generation nanosystems in which the carri...
Semiconductor-based optoelectronic quantum devices are new-generation nanosystems in which the carri...
The most advanced microscopic treatments of optoelectronic quantum devices are reviewed, with specia...
A microscopic investigation of hot-carrier vertical transport phenomena in semiconductor-based infra...
The first global quantum simulation of semiconductor-based quantum-cascade lasers is presented. Our ...
Quantum cascade lasers can be modeled within a hierarchy of different approaches: Standard rate equa...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
We review and discuss the first fully three-dimensional study of non-equilibrium carrier dynamics go...
A microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices is ...
Semiconductor-based optoelectronic quantum devices are new-generation nanosystems in which the carri...
Semiconductor-based optoelectronic quantum devices are new-generation nanosystems in which the carri...
The most advanced microscopic treatments of optoelectronic quantum devices are reviewed, with specia...
A microscopic investigation of hot-carrier vertical transport phenomena in semiconductor-based infra...
The first global quantum simulation of semiconductor-based quantum-cascade lasers is presented. Our ...
Quantum cascade lasers can be modeled within a hierarchy of different approaches: Standard rate equa...