Add to ORKGIn this paper a thermal model that allows to obtain the transient thermal impedance curve of high power diodes and thyristors is presented. The results obtained from the model are compared with the experimental measurements performed on the most diffused families of device packages. In the last section of the paper a method for predicting the transient junction temperature by using PSPICE is outlined. The method is based on the fitting of the transient thermal impedance curve with a finite series of exponential terms
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation ...
We developed a theoretical model to fully describe the time-dependent thermal behavior of high-power...
Abstract – Calculating the transient junction temperature of power semiconductors is important for a...
In this paper a thermal model that allows to obtain the transient thermal impedance curve of high po...
In this paper, an approach to the instantaneous junction temperature evaluation of high-power diodes...
High voltage high pulse-power switches are used in many applications. In many of these applications ...
The thermal analysis and management is an important issue for power semiconductor devices especially...
Due to new applicative domains like embedded systems, power electronic converters are getting more a...
In this paper, improved electrothermal models of the power diode and IGBT have been developed. The m...
Power rectifiers from electrical traction systems, but not only, can be irreversibly damaged if the ...
WOS:000508385200011International audienceLoss estimation in power semiconductor components is an imp...
The experimental characterization of the thermal impedance Zth of large power MOSFETs is commonly do...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
This paper describes and qualifies a partial thermal impedance measurement technique to evaluate the...
The Foster type electro-thermal RC network inside power semiconductor device is normally provided by...
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation ...
We developed a theoretical model to fully describe the time-dependent thermal behavior of high-power...
Abstract – Calculating the transient junction temperature of power semiconductors is important for a...
In this paper a thermal model that allows to obtain the transient thermal impedance curve of high po...
In this paper, an approach to the instantaneous junction temperature evaluation of high-power diodes...
High voltage high pulse-power switches are used in many applications. In many of these applications ...
The thermal analysis and management is an important issue for power semiconductor devices especially...
Due to new applicative domains like embedded systems, power electronic converters are getting more a...
In this paper, improved electrothermal models of the power diode and IGBT have been developed. The m...
Power rectifiers from electrical traction systems, but not only, can be irreversibly damaged if the ...
WOS:000508385200011International audienceLoss estimation in power semiconductor components is an imp...
The experimental characterization of the thermal impedance Zth of large power MOSFETs is commonly do...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
This paper describes and qualifies a partial thermal impedance measurement technique to evaluate the...
The Foster type electro-thermal RC network inside power semiconductor device is normally provided by...
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation ...
We developed a theoretical model to fully describe the time-dependent thermal behavior of high-power...
Abstract – Calculating the transient junction temperature of power semiconductors is important for a...