We studied electron transport in single wall carbon nanotubes placed in stationary homogeneous electric fields, oriented along tubes. Electron distributions for various electric fields are determined by solving stationary multi bands Boltzmann transport equation in presence of electron phonon scattering mechanisms. Contributions of all possible scattering channels, allowed by selection rules and energy conservation, are taken into account for finding scattering rate and collision integrals. As it is previously predicted, large electron drift velocities in straight single wall carbon nanotubes are obtained. Frequent electron scattering as well as low group velocity have strong impact on reduction of drift velocity in helically coiled carbon...
Since the advent of nanoscale material based electronic devices, there has been a considerable inter...
Carbon nanotubes have excellent potential as basic building blocks for nanometer scale electron devi...
With the end of silicon technology scaling in sight, there has been a lot of interest in alternate n...
We studied the stationary electron transport of semiconduction single-wall straight and helically co...
The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is studied in or...
The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is studied in or...
Experimentally is confirmed that helically coiled carbon nanotube (HCCNT) could be used as a small s...
Charge transfer mechanism in carbon nanotubes (CNTs) from the scattering-limited Ohmic transport to ...
Electrical multi terminal measurements on ropes of single wall nanotubes have been conducted. Transp...
The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have a...
We demonstrate the key role of phonon occupation in limiting the high-field ballistic transport in m...
4 pages, 1 figureWe demonstrate the key role of phonon occupation in limiting the high-field ballist...
The field of carbon nano tubes (CNT) is an active area of research theoretically as well experimenta...
The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have a...
We formulated a hydrodynamic model in order to describe the dynamical behavior of the pi-electrons i...
Since the advent of nanoscale material based electronic devices, there has been a considerable inter...
Carbon nanotubes have excellent potential as basic building blocks for nanometer scale electron devi...
With the end of silicon technology scaling in sight, there has been a lot of interest in alternate n...
We studied the stationary electron transport of semiconduction single-wall straight and helically co...
The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is studied in or...
The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is studied in or...
Experimentally is confirmed that helically coiled carbon nanotube (HCCNT) could be used as a small s...
Charge transfer mechanism in carbon nanotubes (CNTs) from the scattering-limited Ohmic transport to ...
Electrical multi terminal measurements on ropes of single wall nanotubes have been conducted. Transp...
The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have a...
We demonstrate the key role of phonon occupation in limiting the high-field ballistic transport in m...
4 pages, 1 figureWe demonstrate the key role of phonon occupation in limiting the high-field ballist...
The field of carbon nano tubes (CNT) is an active area of research theoretically as well experimenta...
The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have a...
We formulated a hydrodynamic model in order to describe the dynamical behavior of the pi-electrons i...
Since the advent of nanoscale material based electronic devices, there has been a considerable inter...
Carbon nanotubes have excellent potential as basic building blocks for nanometer scale electron devi...
With the end of silicon technology scaling in sight, there has been a lot of interest in alternate n...