МОДЕЛИРОВАНИЕ МОП ТРАНЗИСТОРА СО ВСТРОЕННЫМ КАНАЛОМ, ИЗГОТОВЛЕННОГО С ИСПОЛЬЗОВАНИЕМ ДИФФУЗИИ ФОСФОРА В КРЕМНИЙ ИЗ ФОСФОРНЫХ АНОДНЫХ ОКСИДНЫХ ПЛЕНОК

Currently, there is not enough information in literature about MOS transistors with built n-type channel simulation. The article suggests a model of MOSFET with integrated n- type channel, prepared by using phosphorus diffusion in silicon from phosphoric anodic oxide films, based on threshold voltage. Model parameters were calculated for the specific case - capacitance of gate dielectric, transconductance, drain current. It is shown that this model even in a simplified form gives a sufficient agreement with experimental data.Currently, there is not enough information in literature about MOS transistors with built n-type channel simulation. The article suggests a model of MOSFET with integrated n- type channel, prepared by using phosphorus diffusion in silicon from phosphoric anodic oxide films, based on threshold voltage. Model parameters were calculated for the specific case - capacitance of gate dielectric, transconductance, drain current. It is shown that this model even in a simplified form gives a sufficient agreement with experimental data