In wet anisotropic etching based silicon bulk micromachining, undercutting, which has both advantage and disadvantage, takes place at the convex corners of microstructures. In order to retain the desired shape of fabricated structure, corner compensation method is most commonly used to protect the convex corners. The design and shape of the compensation geometry depend on the type of etchant. In this work, various types of corner compensating structures to protect convex corners on Si{110} and Si{110} are studied in potassium hydroxide (KOH) modified by adding NH 2 OH solution. Silicon etch rate in NH 2 OH-added KOH is 3-4 times more than that in pure KOH solution, which is very useful for industrial application to improve productivity. Mes...
A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature o...
Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestan...
The etching characteristics of Si{111} in pure and NH2OH-added 20 wt% KOH are investigated for the f...
This paper investigates the anistropic etching characteristics and convex corner undercut mechanism ...
In this paper, a method for the fabrication of convex corners in (100)-Silicon in KOH-etchant of (10...
This paper presents fabrication of microcantilevers on {100} oriented Si substrate by bulk micromach...
The planes occurring at convex corners during anisotropic etching of (100)-silicon in aqueous KOH we...
Compensation structures are a necessity for wet anisotropic etching of silicon in order to prevent t...
This paper presents microcantilever fabrication on {100} oriented Si substrate using bulk micromachi...
Abstract\ud \ud We combine experiment, theory and simulation to design and fabricate 3D structures w...
Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using ...
In wet anisotropic etching, the etched profile of undercut convex corners depends on the type of etc...
For a long time wet bulk-micromachining has been an easy and cost-effective method for fabricating s...
Abstract Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structur...
In this paper, the mechanism of convex corner (CC) undercutting of Si-{100} in pure aqueous KOH solu...
A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature o...
Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestan...
The etching characteristics of Si{111} in pure and NH2OH-added 20 wt% KOH are investigated for the f...
This paper investigates the anistropic etching characteristics and convex corner undercut mechanism ...
In this paper, a method for the fabrication of convex corners in (100)-Silicon in KOH-etchant of (10...
This paper presents fabrication of microcantilevers on {100} oriented Si substrate by bulk micromach...
The planes occurring at convex corners during anisotropic etching of (100)-silicon in aqueous KOH we...
Compensation structures are a necessity for wet anisotropic etching of silicon in order to prevent t...
This paper presents microcantilever fabrication on {100} oriented Si substrate using bulk micromachi...
Abstract\ud \ud We combine experiment, theory and simulation to design and fabricate 3D structures w...
Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using ...
In wet anisotropic etching, the etched profile of undercut convex corners depends on the type of etc...
For a long time wet bulk-micromachining has been an easy and cost-effective method for fabricating s...
Abstract Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structur...
In this paper, the mechanism of convex corner (CC) undercutting of Si-{100} in pure aqueous KOH solu...
A maskless convex corner compensation technique in a 25 wt% TMAH water solution at the temperature o...
Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestan...
The etching characteristics of Si{111} in pure and NH2OH-added 20 wt% KOH are investigated for the f...