The goal of this research was to investigate the diffusion of aluminum ions in natural aluminum oxide grown under atmospheric conditions. The basis for the approach employed here had been developed earlier by J. H. Christian and H. L.Taylor. However, these authors studied the diffusion of aluminum ions in an oxide grown in a pure oxygen atmosphere. They utilized a glass slide upon which aluminum metal was deposited in vacuo (10-11 Torr). Oxide was then allowed to grow on this metal by back-filling the vacuum with pure oxygen to a pressure of 40 to 50 m Torr while infrared lamps heated the aluminum metal substrate to 550° K. After again pumping to a low pressure, and with the substrate at room temperature, a second evaporation of aluminum ...
By anodic oxidation, an aluminum plate can be covered with an amorphous or crystalline oxide layer, ...
Vaccum deposition can easily produce metal films of uniform thickness. When two such metal film...
The use of Al as an electrode in metal-insulator-semiconductor devices contg. La2O3 is impaired by u...
The oxide formed during anodization of aluminium has been a subject of attention since the beginning...
Heterogeneous oxidation of aluminum is rate limited by diffusion through a growing aluminum oxide la...
Aluminum oxide growth rate is needed to properly design an aluminum mirror for reflection of far ult...
The diffusion distance of Al atoms on Si(111), SiO2, and Si3N4 substrates has been measured as a fun...
Thesis. 1977. Sc.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineeri...
It is widely accepted that the growth of protective ?-Al2O3 scales on Ni-based alloys is governed by...
VACUUM deposition can easily produce metal films of uniform thickness. When two such metal f...
Oxygen self diffusion coefficients were determined in single crystal alpha-Al2O3 using the gas excha...
The authors synthesized samples of aluminum hydroxide by the method of controlled two-jet precipitat...
The growth of anodic aluminum films on silicon was investigated. The films were formed using an elec...
Aluminum is among the metals with the greatest affinity for oxygen. Aluminum oxidation occurs easily...
Aluminium and their alloys readily react with air to form surface oxides and films. If they become e...
By anodic oxidation, an aluminum plate can be covered with an amorphous or crystalline oxide layer, ...
Vaccum deposition can easily produce metal films of uniform thickness. When two such metal film...
The use of Al as an electrode in metal-insulator-semiconductor devices contg. La2O3 is impaired by u...
The oxide formed during anodization of aluminium has been a subject of attention since the beginning...
Heterogeneous oxidation of aluminum is rate limited by diffusion through a growing aluminum oxide la...
Aluminum oxide growth rate is needed to properly design an aluminum mirror for reflection of far ult...
The diffusion distance of Al atoms on Si(111), SiO2, and Si3N4 substrates has been measured as a fun...
Thesis. 1977. Sc.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineeri...
It is widely accepted that the growth of protective ?-Al2O3 scales on Ni-based alloys is governed by...
VACUUM deposition can easily produce metal films of uniform thickness. When two such metal f...
Oxygen self diffusion coefficients were determined in single crystal alpha-Al2O3 using the gas excha...
The authors synthesized samples of aluminum hydroxide by the method of controlled two-jet precipitat...
The growth of anodic aluminum films on silicon was investigated. The films were formed using an elec...
Aluminum is among the metals with the greatest affinity for oxygen. Aluminum oxidation occurs easily...
Aluminium and their alloys readily react with air to form surface oxides and films. If they become e...
By anodic oxidation, an aluminum plate can be covered with an amorphous or crystalline oxide layer, ...
Vaccum deposition can easily produce metal films of uniform thickness. When two such metal film...
The use of Al as an electrode in metal-insulator-semiconductor devices contg. La2O3 is impaired by u...