Add to ORKGA method of manufacturing a semiconductor structure includes the steps of depositing a layer of semiconductor oxide on a base semiconductor layer, scavenging oxygen from the layer of semiconductor oxide and recrystallizing the oxygen scavenged layer of semiconductor oxide as a semiconductor heteroepitaxy layer
[[abstract]]A method for fabricating a semiconductor device. A shallow trench isolation is formed by...
High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a S...
HEMT transistor (50; 100; 150) having a semiconductor body (52) forming a semiconductive heterostruc...
A heterojunction transistor with high mobility carriers in the channel region includes a source regi...
A method of forming a semiconductor device includes the following steps: providing a plurality of se...
WO 2010139546 A1 UPAB: 20110111 NOVELTY - The method for producing a semiconductor structural elemen...
The transfer of strained semiconductor layers from one substrate to another substrate involves depos...
A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructu...
A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a p...
The technological development of semiconductor materials started in the period following the second ...
In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabri...
A method including the steps of (a) depositing a metal layer on a selected portion of a silicon subs...
[[abstract]]A method for manufacturing a metal oxide semiconductor transistor having a raised source...
[[abstract]]A novel method of making articles that comprise a periodic heteroepitaxial semiconductor...
[[abstract]]Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g...
[[abstract]]A method for fabricating a semiconductor device. A shallow trench isolation is formed by...
High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a S...
HEMT transistor (50; 100; 150) having a semiconductor body (52) forming a semiconductive heterostruc...
A heterojunction transistor with high mobility carriers in the channel region includes a source regi...
A method of forming a semiconductor device includes the following steps: providing a plurality of se...
WO 2010139546 A1 UPAB: 20110111 NOVELTY - The method for producing a semiconductor structural elemen...
The transfer of strained semiconductor layers from one substrate to another substrate involves depos...
A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructu...
A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a p...
The technological development of semiconductor materials started in the period following the second ...
In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabri...
A method including the steps of (a) depositing a metal layer on a selected portion of a silicon subs...
[[abstract]]A method for manufacturing a metal oxide semiconductor transistor having a raised source...
[[abstract]]A novel method of making articles that comprise a periodic heteroepitaxial semiconductor...
[[abstract]]Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g...
[[abstract]]A method for fabricating a semiconductor device. A shallow trench isolation is formed by...
High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a S...
HEMT transistor (50; 100; 150) having a semiconductor body (52) forming a semiconductive heterostruc...