The use of organic semiconductors in high-performance organic field-effect transistors requires a thorough understanding of the effects that processing conditions, thermal, and bias-stress history have on device operation. Here, we evaluate the temperature dependence of the electrical properties of transistors fabricated with 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, a material that has attracted much attention recently due to its exceptional electrical properties. We have discovered a phase transition at T = 205 K and discuss its implications on device performance and stability. We examined the impact of this low-temperature phase transition on the thermodynamic, electrical, and structural properties of both single crys...
International audienceTwo thiophene-phenylene semiconductors, bis(2-phenylethynyl) end-substituted o...
International audienceTwo thiophene-phenylene semiconductors, bis(2-phenylethynyl) end-substituted o...
It is reported that the electrical instability known as bias stress is caused by the presence of tra...
Many properties of organic semiconductors, such as charge transport or optical absorbance, are gover...
Many properties of organic semiconductors, such as charge transport or optical absorbance, are gover...
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors ...
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors ...
An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alph...
An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alph...
The crystalline structure of organic materials dictates their physical properties, but while signifi...
We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ra...
Solution processed organic semiconductors contain extrinsic environmental species that cause device ...
We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ra...
The crystalline structure of organic materials dictates their physical properties, but while signifi...
International audienceTwo thiophene-phenylene semiconductors, bis(2-phenylethynyl) end-substituted o...
International audienceTwo thiophene-phenylene semiconductors, bis(2-phenylethynyl) end-substituted o...
International audienceTwo thiophene-phenylene semiconductors, bis(2-phenylethynyl) end-substituted o...
It is reported that the electrical instability known as bias stress is caused by the presence of tra...
Many properties of organic semiconductors, such as charge transport or optical absorbance, are gover...
Many properties of organic semiconductors, such as charge transport or optical absorbance, are gover...
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors ...
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors ...
An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alph...
An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alph...
The crystalline structure of organic materials dictates their physical properties, but while signifi...
We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ra...
Solution processed organic semiconductors contain extrinsic environmental species that cause device ...
We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ra...
The crystalline structure of organic materials dictates their physical properties, but while signifi...
International audienceTwo thiophene-phenylene semiconductors, bis(2-phenylethynyl) end-substituted o...
International audienceTwo thiophene-phenylene semiconductors, bis(2-phenylethynyl) end-substituted o...
International audienceTwo thiophene-phenylene semiconductors, bis(2-phenylethynyl) end-substituted o...
It is reported that the electrical instability known as bias stress is caused by the presence of tra...