Selective Sensing in Hybrid Imagers with Vertically Integrated Perovskite Pixels

The rise of organometal halide perovskite materials with extremely intriguing properties have opened a new horizon in the design of high speed and low price optoelectronic devices. The bandgap in the crystalline structure of these materials can be easily tuned for various applications and their dominant non-excitonic dynamics eliminate the requirement of a bulk or heterostructure for charge carrier separation. These unique properties increase the photo-sensitivity of perovskite-based optoelectronics and provide them with a low time constant, resulting in high precision fast devices. Realization of perovskite-based devices translates directly to inexpensive and simplified architectures of optoelectronic systems. In perovskite-based devices, costly silicon or wide bandgap semiconductor fabrication technology is largely replaced by solution processable methods. Their bandgap tunability allows the reduction of the required optical accessories and interconnects in optoelectronic components. For instance, a tuned perovskite-based detector can substitute a narrowband detecting system consisting of a conventional detector and its required optical accessories such as lenses and color filters. These properties of perovskite-based devices lead to the realization of inexpensive, low power and high-performance optoelectronic systems. In this work, the design of a narrowband, low noise, high performance and stable photodetector based on organic-inorganic hybrid perovskite structure is proposed. The full width at half maximum (FWHM) of the device would be in the nanometer range. The response of the device can be tuned using either different ratios of the lead salts or synthetic dyes (macromolecules) in the crystalline structure for color discrimination in machine vision and imaging applications. Non-excitonic photocarrier generation, tunability of the optical bandgap and low voltage requirements for charge carrier generation are the keys to the utility of this optoelectronic device. The goals of this project were to identify the required functional materials (lead salts and synthetic dyes based on their molecular structures) and optimize their performance; the study of their effect on the charge collection narrowing mechanism and bandwidth specifications defined for detectivity, linear dynamic range (LDR) and photoresponse speed. To achieve these goals, it was proposed to study the light detection properties as well as spectroscopic and semiconductor parameter characteristics of fabricated devices. The design considerations of such devices are versatile and may be modulated for different applications