The feasibility of choosing noise-voltage spectral density as a prediction parameter for the degradation of p-n junctions has been examined both theoretically and through a series of life-tests. Experimental facts show that the noise-voltage spectral density, Sv(w), observed in a p-n junction under the breakdown condition tends to be white (which contradicts the 1/f-noise theory), and Sv(w) is inversely proportional to the breakdown current (which contradicts the shot-noise theory). Furthermore, some p-n junctions display one or more multiple peaks of Sv(w) at different current levels which can not be explained by any of the existing noise theories. In the derivation of a new theory, four factors are proposed to explain the behavior of Sv...
A theoretical model for the noise properties of Schottky barrier diodes in the framework of the ther...
Fundamental aspects of the $p{-}n$ junction have been considered in order to obtain an analytical mo...
Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models...
The feasibility of choosing noise-voltage spectral density as a prediction parameter for the degrada...
Experimental facts about noise are presented which help us to understand the correlation between noi...
International audienceTheories on linear white noise sources such as thermal noise or shot noise are...
Abstract: The present paper deals with noise diagnostics of PN junctions in semiconductor devices. T...
The doctoral thesis deals with diagnostics of local defects in PN junctions and brings new informati...
This paper presents mainly noise diagnostics of pn junctions local defects in a singlecrystalline si...
An investigation of semiconductor surface-related phenomena has been undertaken to correlate 1/F noi...
The noise characteristics of ideal photovoltaic p-n junction diodes are discussed and investigated. ...
Noise models for diodes and transistors I pn junctions and BJTs- shot noise, flicker noise, burst no...
Abstract: Local avalanche breakdowns take place in the neighbourhood of PN junction local defects at...
A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to ex...
Measurements are made on Si p - n junctions under reverse bias in the unstable avalanche breakdown r...
A theoretical model for the noise properties of Schottky barrier diodes in the framework of the ther...
Fundamental aspects of the $p{-}n$ junction have been considered in order to obtain an analytical mo...
Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models...
The feasibility of choosing noise-voltage spectral density as a prediction parameter for the degrada...
Experimental facts about noise are presented which help us to understand the correlation between noi...
International audienceTheories on linear white noise sources such as thermal noise or shot noise are...
Abstract: The present paper deals with noise diagnostics of PN junctions in semiconductor devices. T...
The doctoral thesis deals with diagnostics of local defects in PN junctions and brings new informati...
This paper presents mainly noise diagnostics of pn junctions local defects in a singlecrystalline si...
An investigation of semiconductor surface-related phenomena has been undertaken to correlate 1/F noi...
The noise characteristics of ideal photovoltaic p-n junction diodes are discussed and investigated. ...
Noise models for diodes and transistors I pn junctions and BJTs- shot noise, flicker noise, burst no...
Abstract: Local avalanche breakdowns take place in the neighbourhood of PN junction local defects at...
A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to ex...
Measurements are made on Si p - n junctions under reverse bias in the unstable avalanche breakdown r...
A theoretical model for the noise properties of Schottky barrier diodes in the framework of the ther...
Fundamental aspects of the $p{-}n$ junction have been considered in order to obtain an analytical mo...
Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models...