Electronic properties of hydrogen-doped (Zr_80 3d_20)_1-xH_x (3d = Fe, Co, Ni) metallic glasses

The electrical resistivities of hydrogen-doped (Zr_80 3d_20)_1-xH_x (3d = Fe, Co, Ni; x ≤ 0.11) metallic glasses have been measured at temperatures between 2 K and 290 K. The increase of the room-temperature resistivity and its temperature coefficient are explained as a consequence of increased disorder due to hydrogen-doping. The temperature dependence of the resistivity has been analysed using theoretical models of weak-localisation and electron-electron interaction in disordered three-dimensional conductors. The hydrogen dopant is found to reduce effective electron diffusion constant, D, the spin-orbit scattering rate, τ_so^-1, the superconducting transition temperature, T_c, and broadens the superconducting transition region. We discuss the effects of different hydrogen environments on T_c of (Zr_80 3d_20)_1-xH_x metallic glasses