Add to ORKGThin film transistors were fabricated to investigate the influence of the addition of a fluorine preamorphization implant on boron activation in the source/drain. The addition of the fluorine resulted in a higher drive current for high dose implants (5x1015 cm-2). The higher current as well as an increased calculated mobility supports the hypothesis that fluorine implant increases boron activation. Device performance was noticed to be dependent on its location on the wafer complicating experimental analysis. Additional system control would allow for more direct treatment comparisons
This paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1-x...
The flat panel industry requires high performance semiconductor materials to withstand the growth ra...
In this thesis a study is made of the growth of buried boron marker layers with sharp and narrow bor...
As the CMOS transistor scaling is approaching its physical limits, the semiconductor industry is for...
As the CMOS transistor scaling is approaching its physical limits, the semiconductor industry is for...
As the CMOS transistor scaling is approaching its physical limits, the semiconductor industry is for...
As CMOS device dimensions continue to shrink below 200nm, one of the major limiting factors in scali...
The role of fluorine in a BF2 implant has been investigated by implanting BF2, B alone and different...
This paper presents a comprehensive study on the characteristics of n- and p-channel polycrystalline...
This thesis reports the results of experiments aimed at understanding the behaviour of fluorine unde...
For the next generation of electronic products, transistors need to be reduced in size and are requi...
This paper presents a comprehensive study on the characteristics of n- and p-channel polycrystalline...
This paper investigates how fluorine implantation can be used to suppress boron diffusion in the bas...
We present experimental results on the activation and diffusion behaviors of boron in silicon-on-ins...
This paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1-x...
This paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1-x...
The flat panel industry requires high performance semiconductor materials to withstand the growth ra...
In this thesis a study is made of the growth of buried boron marker layers with sharp and narrow bor...
As the CMOS transistor scaling is approaching its physical limits, the semiconductor industry is for...
As the CMOS transistor scaling is approaching its physical limits, the semiconductor industry is for...
As the CMOS transistor scaling is approaching its physical limits, the semiconductor industry is for...
As CMOS device dimensions continue to shrink below 200nm, one of the major limiting factors in scali...
The role of fluorine in a BF2 implant has been investigated by implanting BF2, B alone and different...
This paper presents a comprehensive study on the characteristics of n- and p-channel polycrystalline...
This thesis reports the results of experiments aimed at understanding the behaviour of fluorine unde...
For the next generation of electronic products, transistors need to be reduced in size and are requi...
This paper presents a comprehensive study on the characteristics of n- and p-channel polycrystalline...
This paper investigates how fluorine implantation can be used to suppress boron diffusion in the bas...
We present experimental results on the activation and diffusion behaviors of boron in silicon-on-ins...
This paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1-x...
This paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1-x...
The flat panel industry requires high performance semiconductor materials to withstand the growth ra...
In this thesis a study is made of the growth of buried boron marker layers with sharp and narrow bor...