Two photodiode architectures were designed, built, and tested for comparison for implementation into a fluorescence spectroscopy, or fluorometric, system. All devices were fabricated on 4-inch, N-type silicon substrates. The photodiodes presented were tested for responsivity and response time, two main factors judging effective incorporation in fluorometric applications. The planar photodiode excels in responsivity due to the device’s large active-area; however, high junction capacitance greatly hinders the response time. The lateral photodiode had much lower junction capacitance than the planar, but exhibited lesser responsivity due to the decreased active area size. The lateral photodiode was chosen as a candidate for timeresolved measure...
Optical receivers are used to detect optical power and to extract the information that is being tran...
Fluorescence spectroscopy has become a prominent research tool with wide applications in medical dia...
We present a CMOS chip 256 × 2 single photon avalanche diode (SPAD) line sensor, 23.78 µm pitch, 43....
Two photodiode architectures were designed, built, and tested for comparison for implementation into...
On montre qu'un réseau de quatre photodiodes en silicium utilisées en mode photovoltaïque présente d...
As an important detection tool in biochemistry, fluorescence detection has wide applications. Quanti...
In the paper a measurement method of fluorescence intensity reduction (called photobleaching) caused...
A high‐speed, normally on, gating circuit has been developed for linear‐focused photomultipliers suc...
Time-resolved fluorescence measurements enable the study of structure of molecular systems and dynam...
Modern laboratory equipments to measure the excited-state lifetime of fluorophores usually include a...
Detection of scintillation light from LSO (Lutetiumoxyorthosilicate) crystals used in positron emiss...
This thesis originates from and develops around Silicon Photomultipliers (SiPMs): starting from a de...
Recent improvements in the capabilities of commercially available digitization electronics provided ...
The transducer consists on a semiconductor device based on two stacked-i-n heterostructures, that w...
This thesis focuses on the design of a versatile, portable, and cost-effective fluorescence detectio...
Optical receivers are used to detect optical power and to extract the information that is being tran...
Fluorescence spectroscopy has become a prominent research tool with wide applications in medical dia...
We present a CMOS chip 256 × 2 single photon avalanche diode (SPAD) line sensor, 23.78 µm pitch, 43....
Two photodiode architectures were designed, built, and tested for comparison for implementation into...
On montre qu'un réseau de quatre photodiodes en silicium utilisées en mode photovoltaïque présente d...
As an important detection tool in biochemistry, fluorescence detection has wide applications. Quanti...
In the paper a measurement method of fluorescence intensity reduction (called photobleaching) caused...
A high‐speed, normally on, gating circuit has been developed for linear‐focused photomultipliers suc...
Time-resolved fluorescence measurements enable the study of structure of molecular systems and dynam...
Modern laboratory equipments to measure the excited-state lifetime of fluorophores usually include a...
Detection of scintillation light from LSO (Lutetiumoxyorthosilicate) crystals used in positron emiss...
This thesis originates from and develops around Silicon Photomultipliers (SiPMs): starting from a de...
Recent improvements in the capabilities of commercially available digitization electronics provided ...
The transducer consists on a semiconductor device based on two stacked-i-n heterostructures, that w...
This thesis focuses on the design of a versatile, portable, and cost-effective fluorescence detectio...
Optical receivers are used to detect optical power and to extract the information that is being tran...
Fluorescence spectroscopy has become a prominent research tool with wide applications in medical dia...
We present a CMOS chip 256 × 2 single photon avalanche diode (SPAD) line sensor, 23.78 µm pitch, 43....