The objective of this experiment is to obtain an endpoint detection unit that can be used on all plasma etch tools in the Semiconductor and Microsystems Fabrication Laboratory (SMFL). This investigation examined one of the most common methods for end point detection in plasma etching; optical emission spectroscopy. Optical emission spectroscopy involves monitoring the wavelength emission intensity of the plasma of different species within the etchant plasma. From all of the data collected in this experiment it was shown that the Ocean Optics Spectrometer can be utilized for end point detection on any toolset in the SMFL
This paper presents the EtchRate Wafer, a wireless monitoring silicon wafer that was invented by K...
To investigate the electrical changes observed at plasma etching endpoints, experiments were perform...
Abstract: In semiconductor wafer fabrication, etching is one of the most critical processes, by whi...
Optical Emission Spectroscopy was implemented for determining the endpoint of film removal through d...
Optical emission spectroscopy has been appl ied to precise end point detection in plasma etching (1-...
International audienceLaser interferometry and optical emission spectroscopy are well known techniqu...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2002.Includes ...
Optical emission spectroscopy has been established as a simple method for simultaneous etch rate det...
A spatially resolved optical emission spectroscopy sensor has been developed, and the resulting reco...
The use of optical emission spectra for end point detection has been reported for the CF 4 plasma et...
In current semiconductor manufacturing, as the feature size of integrated circuit (IC) devices conti...
Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer et...
One of the major issues in integrated circuit manufacturing is the macroscopic uniformity of a proce...
Monitoring optical emission has become avaluable tool for the plasma processing of semiconductor mat...
In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the...
This paper presents the EtchRate Wafer, a wireless monitoring silicon wafer that was invented by K...
To investigate the electrical changes observed at plasma etching endpoints, experiments were perform...
Abstract: In semiconductor wafer fabrication, etching is one of the most critical processes, by whi...
Optical Emission Spectroscopy was implemented for determining the endpoint of film removal through d...
Optical emission spectroscopy has been appl ied to precise end point detection in plasma etching (1-...
International audienceLaser interferometry and optical emission spectroscopy are well known techniqu...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2002.Includes ...
Optical emission spectroscopy has been established as a simple method for simultaneous etch rate det...
A spatially resolved optical emission spectroscopy sensor has been developed, and the resulting reco...
The use of optical emission spectra for end point detection has been reported for the CF 4 plasma et...
In current semiconductor manufacturing, as the feature size of integrated circuit (IC) devices conti...
Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer et...
One of the major issues in integrated circuit manufacturing is the macroscopic uniformity of a proce...
Monitoring optical emission has become avaluable tool for the plasma processing of semiconductor mat...
In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the...
This paper presents the EtchRate Wafer, a wireless monitoring silicon wafer that was invented by K...
To investigate the electrical changes observed at plasma etching endpoints, experiments were perform...
Abstract: In semiconductor wafer fabrication, etching is one of the most critical processes, by whi...