Unlike conventional hard programmed gate arrays, the Field Programmable Logic Array (FLPA) offers the end user the ability to instantly change the outputted function of the circuit through an external electronic programming sequence. This project outlines the design and fabrication of a P Well CMOS NOR logic FPLA. Consisting of roughly 1,400 transistors, three major functional components were designed: Floating Tunnel Oxide EEPROM memory bank, an EEPROM addressing system, and a 3 input I 3 output / 2 return state programmable logic array. Fabrication was carried out at the RIT fabrication facility and upon testing the completed devices it was found that the NMOS devices were too leaky for proper circuit operation. This was due to a partiall...
A four bit microprocessor’s layout was drawn on an Apollo workstation using MOSIS two lambda design ...
Thermally actuated micromirrors were fabricated to demonstrate a CMOS compatible surface micromachin...
A study has been performed to investigate oxynitrides as thin gate dielectrics. The method of nitrid...
An electrically erasable programmable read only memory (EEPROM) device, utilizing a double polysilic...
The creation of MANN files, generated by computer programs, to produce other than rectangular featur...
The objective of this project was to investigate the possibility of producing array of microplasma, ...
In present day electronic systems a basic building block is the operational amplifier. Therefore, a ...
The aim of this project is to develop a dry etching process that could be utilized to realize high a...
The objective of this project is to fabricate linear metallic patterns based on block copolymer lith...
A four bit CMOS arithmetic logic unit was designed. The design was layed out in ICE (integrated circ...
Resolution capability of a GCA Mann 4800 DSW Stepper was improved using a bilayer photoresist scheme...
The redesign and layout of a clocked eight-bit digital to analog converter using emitter coupled log...
A common way of designing microelectronic circuits is by the use of standard cells. In advance syste...
This project entailed the design, fabrication, and testing of a surface micro-machined electret pres...
A double level polysilicon self-aligned PMOS process was used to fabricate an integrator circuit usi...
A four bit microprocessor’s layout was drawn on an Apollo workstation using MOSIS two lambda design ...
Thermally actuated micromirrors were fabricated to demonstrate a CMOS compatible surface micromachin...
A study has been performed to investigate oxynitrides as thin gate dielectrics. The method of nitrid...
An electrically erasable programmable read only memory (EEPROM) device, utilizing a double polysilic...
The creation of MANN files, generated by computer programs, to produce other than rectangular featur...
The objective of this project was to investigate the possibility of producing array of microplasma, ...
In present day electronic systems a basic building block is the operational amplifier. Therefore, a ...
The aim of this project is to develop a dry etching process that could be utilized to realize high a...
The objective of this project is to fabricate linear metallic patterns based on block copolymer lith...
A four bit CMOS arithmetic logic unit was designed. The design was layed out in ICE (integrated circ...
Resolution capability of a GCA Mann 4800 DSW Stepper was improved using a bilayer photoresist scheme...
The redesign and layout of a clocked eight-bit digital to analog converter using emitter coupled log...
A common way of designing microelectronic circuits is by the use of standard cells. In advance syste...
This project entailed the design, fabrication, and testing of a surface micro-machined electret pres...
A double level polysilicon self-aligned PMOS process was used to fabricate an integrator circuit usi...
A four bit microprocessor’s layout was drawn on an Apollo workstation using MOSIS two lambda design ...
Thermally actuated micromirrors were fabricated to demonstrate a CMOS compatible surface micromachin...
A study has been performed to investigate oxynitrides as thin gate dielectrics. The method of nitrid...