Development of Bonding and Etchback Silicon on Insulator Wafers

Bonding and Etchback Silicon on Insulator wafers were successfully developed at the Rochester Institute of Technology\u27s Microelectronics facilities. [100] and [111] wafer pairs were successfully bonded using SOG and Thermal Oxides and etched back using times KOH etch. The results were successfully bonded wafer with a large Silicon layer