This work reports on the results of two innovative designs for efficient silicon-based light emitting devices(LEDs). The two devices demonstrated improvement on the extraction efficiency of photons produced by electroluminescent porous silicon. With the previous structures, the produced luminescence was collected from the surface of the devices through the uses a redesigned top contact along with an etch into the active region of the device. The second type used an edge emitting arrangement. The new surface emitting device showed visible luminescence that was easily seen in a dim ambient. the edge emitting structure exhibited an increase in intensity of between two and three orders of magnitude. This paper will not discuss the physical devi...
The development of electroluminescence in porous silicon is reported. Main achivements up to now are...
In this paper we present our recent progresses towards efficient light emitting diodes based on poro...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
This work reports on the results of two innovative designs for efficient silicon-based light emittin...
Electroluminescent devices in porous silicon technology are presented. The fabrication and the chara...
The fabrication technology and the properties of a light-emitting device including a porous pn junct...
The fabrication and the characteristics of light emitting porous silicon devices are presented. Unde...
The demonstration of efficient and reliable light emitting diodes (LED) in a silicon based system wi...
At the present stage of the exploration of porous silicon it seems impossible to explain all experim...
In this paper we present our recent progresses towards efficient light emitting diodes based on poro...
The photoluminescence and electroluminescence of light emitting porous silicon (LEPOS) is described....
Although silicon is the dominant semiconductor today, lightemitting devices are currently based on c...
The primary focus of this project was to continue process development of integrated PSibased (porous...
The electrochemical etching of crystalline silicon in hydrofluoric acid based solutions has been fou...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
The development of electroluminescence in porous silicon is reported. Main achivements up to now are...
In this paper we present our recent progresses towards efficient light emitting diodes based on poro...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
This work reports on the results of two innovative designs for efficient silicon-based light emittin...
Electroluminescent devices in porous silicon technology are presented. The fabrication and the chara...
The fabrication technology and the properties of a light-emitting device including a porous pn junct...
The fabrication and the characteristics of light emitting porous silicon devices are presented. Unde...
The demonstration of efficient and reliable light emitting diodes (LED) in a silicon based system wi...
At the present stage of the exploration of porous silicon it seems impossible to explain all experim...
In this paper we present our recent progresses towards efficient light emitting diodes based on poro...
The photoluminescence and electroluminescence of light emitting porous silicon (LEPOS) is described....
Although silicon is the dominant semiconductor today, lightemitting devices are currently based on c...
The primary focus of this project was to continue process development of integrated PSibased (porous...
The electrochemical etching of crystalline silicon in hydrofluoric acid based solutions has been fou...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
The development of electroluminescence in porous silicon is reported. Main achivements up to now are...
In this paper we present our recent progresses towards efficient light emitting diodes based on poro...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...