Add to ORKGA silicon trench 2um deep was etched in a PlasmaTherm 2406 RIE tool using an SF6/C02 chemistry with an oxide mask. The single crystal silicon etch rate was 1100A/min, with a high selectivity to oxide. A trench slope approximately 50 degrees was obtained, with no undercut of the oxide mask
We present the optimization of the critical etching step for the fabrication of silicon Deep Trench-...
[[abstract]]This paper discusses a novel structure of deep trench capacitor with breakdown voltage o...
An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samp...
A new process for etching trenches in bulk silicon for the generation of trench capacitors in highly...
International audienceA reliable factorial experimental design was applied to DRIE for specifically ...
Deep trenches are playing a key role in VLSI circuits both for isolation and for DRAM capacitor cell...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced loca...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced LOCO...
Shallow Trench Isolation (STI) holds many advantages to that of its predecessor isolation technology...
A new silicon trench etching process has been developed by using a new material ZrN as mask which is...
Reactive Ion Etching (RIE) is an important process widely used in the fabrication of micro-electro m...
A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10 μm wide to a ...
Plasma and magnetically enhanced reactive ion etching processes with chlorine gas have been develope...
A planarized evice isolution process (PLANTI) has been developed and optimized by using a deep-trenc...
Silicon deep trench capacitors represent a promising alternative to surface-mounted capacitors, whic...
We present the optimization of the critical etching step for the fabrication of silicon Deep Trench-...
[[abstract]]This paper discusses a novel structure of deep trench capacitor with breakdown voltage o...
An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samp...
A new process for etching trenches in bulk silicon for the generation of trench capacitors in highly...
International audienceA reliable factorial experimental design was applied to DRIE for specifically ...
Deep trenches are playing a key role in VLSI circuits both for isolation and for DRAM capacitor cell...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced loca...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced LOCO...
Shallow Trench Isolation (STI) holds many advantages to that of its predecessor isolation technology...
A new silicon trench etching process has been developed by using a new material ZrN as mask which is...
Reactive Ion Etching (RIE) is an important process widely used in the fabrication of micro-electro m...
A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10 μm wide to a ...
Plasma and magnetically enhanced reactive ion etching processes with chlorine gas have been develope...
A planarized evice isolution process (PLANTI) has been developed and optimized by using a deep-trenc...
Silicon deep trench capacitors represent a promising alternative to surface-mounted capacitors, whic...
We present the optimization of the critical etching step for the fabrication of silicon Deep Trench-...
[[abstract]]This paper discusses a novel structure of deep trench capacitor with breakdown voltage o...
An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samp...