Add to ORKGA chip was designed containing lateral bipolar PNP devices with base widths ranging from four to ten microns. Vertical NPN devices were included in the designs. The transistors were fabricated using a double diffused process employing solid sources. Two different boron collector/emitter predepositions were performed in order to study the effects of the p-type diffusion sheet resistance on both lateral PNP and vertical NPN devices. Testing of the lateral PNP devices shows very small Early voltages for the five and six micron designs, while the four micron design exhibits punchthrough
In this investigation, efforts have been made to move the Microelectronic Engineering Program at Roc...
Bipolar integrated circuit transistors are made on a thin and lightly doped epitaxial layer. This th...
This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution...
The objective of this research was to add an npn-bipolar transistor for a CMOS process. This was to ...
We report the fabrication of lateral pnp bipolar transistors using focused ion beam (FIB) implants o...
Polysilicon emitter vertical NPN transistors were fabricated in an attempt to create devices with ve...
The conventional high voltage power transistor is a vertical device. That is, one in which the curre...
Lateral p-n-p transistors and a complementary bipolar technology have been demonstrated for analog i...
The development of integrated circuits toward high voltages introduce difficult compromises in regar...
An NPN bipolar transistor process was designed and fabricated for incorporation with RIT’s N well CM...
Abstract—Silicon complementary bipolar processes offer the possibility of realizing high-performance...
A bipolar fabrication service has been developed at the Rochester Institute of Technology to service...
Several cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions an...
A new lateral bipolar junction transistor that utilises a double-polysilicon self-aligned structure ...
Analog circuits are integral part of electronic system. They are being used for high voltage purpose...
In this investigation, efforts have been made to move the Microelectronic Engineering Program at Roc...
Bipolar integrated circuit transistors are made on a thin and lightly doped epitaxial layer. This th...
This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution...
The objective of this research was to add an npn-bipolar transistor for a CMOS process. This was to ...
We report the fabrication of lateral pnp bipolar transistors using focused ion beam (FIB) implants o...
Polysilicon emitter vertical NPN transistors were fabricated in an attempt to create devices with ve...
The conventional high voltage power transistor is a vertical device. That is, one in which the curre...
Lateral p-n-p transistors and a complementary bipolar technology have been demonstrated for analog i...
The development of integrated circuits toward high voltages introduce difficult compromises in regar...
An NPN bipolar transistor process was designed and fabricated for incorporation with RIT’s N well CM...
Abstract—Silicon complementary bipolar processes offer the possibility of realizing high-performance...
A bipolar fabrication service has been developed at the Rochester Institute of Technology to service...
Several cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions an...
A new lateral bipolar junction transistor that utilises a double-polysilicon self-aligned structure ...
Analog circuits are integral part of electronic system. They are being used for high voltage purpose...
In this investigation, efforts have been made to move the Microelectronic Engineering Program at Roc...
Bipolar integrated circuit transistors are made on a thin and lightly doped epitaxial layer. This th...
This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution...