Add to ORKGThe fabrication of T-gate structures using a bilayer resist scheme of PMMA 495K molecular weight (4% solids) and PMMA 950K molecular weight (3~ solids) for use with electron beam exposure was investigated. The 1.18 sensitivity ratio between these resists was found to be insufficient to adequately provide the resist cavity necessary for fabrication of T-gate aluminum structures
The Tegal 700 plasma etcher was used to etch trenches into four micron deep p-type diffused resistor...
The redesign and layout of a clocked eight-bit digital to analog converter using emitter coupled log...
Hot electron injection was investigated using the HP 4145B SPA to induce Fewler- Nordheim tunneling....
KTI-820, a positive photoresist was hardened utilizing two different methods. The PRIST technique in...
Two bilayer E-beam/DUV resist schemes were developed using a DUV sensitive PMGI planarization layer ...
The objective of this project was to investigate the possibility of producing array of microplasma, ...
The design and fabrication of N-channel MOS transistors with effective gate lengths of 0.5μm or smal...
An array of photodiodes consisting of various areas and/or metallization schemes were fabricated for...
The objective of this project is to fabricate linear metallic patterns based on block copolymer lith...
An electrically erasable programmable read only memory (EEPROM) device, utilizing a double polysilic...
Resonant Interband Tunnel Diodes (RITD) with device sizes ranging from r=20μm to r=50nm (mask define...
Thermally actuated micromirrors were fabricated to demonstrate a CMOS compatible surface micromachin...
A simple, MEMS base micro-chemical detector utilizing the principles of gas ionization, has been des...
A 126 bit by one bit NMDS static RAM was designed following design rules for RIT’s standard four lay...
Integrated Injection Logic gates (IlL) were fabricated at RIT by the use of a double diffused, four ...
The Tegal 700 plasma etcher was used to etch trenches into four micron deep p-type diffused resistor...
The redesign and layout of a clocked eight-bit digital to analog converter using emitter coupled log...
Hot electron injection was investigated using the HP 4145B SPA to induce Fewler- Nordheim tunneling....
KTI-820, a positive photoresist was hardened utilizing two different methods. The PRIST technique in...
Two bilayer E-beam/DUV resist schemes were developed using a DUV sensitive PMGI planarization layer ...
The objective of this project was to investigate the possibility of producing array of microplasma, ...
The design and fabrication of N-channel MOS transistors with effective gate lengths of 0.5μm or smal...
An array of photodiodes consisting of various areas and/or metallization schemes were fabricated for...
The objective of this project is to fabricate linear metallic patterns based on block copolymer lith...
An electrically erasable programmable read only memory (EEPROM) device, utilizing a double polysilic...
Resonant Interband Tunnel Diodes (RITD) with device sizes ranging from r=20μm to r=50nm (mask define...
Thermally actuated micromirrors were fabricated to demonstrate a CMOS compatible surface micromachin...
A simple, MEMS base micro-chemical detector utilizing the principles of gas ionization, has been des...
A 126 bit by one bit NMDS static RAM was designed following design rules for RIT’s standard four lay...
Integrated Injection Logic gates (IlL) were fabricated at RIT by the use of a double diffused, four ...
The Tegal 700 plasma etcher was used to etch trenches into four micron deep p-type diffused resistor...
The redesign and layout of a clocked eight-bit digital to analog converter using emitter coupled log...
Hot electron injection was investigated using the HP 4145B SPA to induce Fewler- Nordheim tunneling....