Add to ORKGThe effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premetalization cleaning, divided into a standard RCA clean, DC glow discharge plasma clean, and no clean, were performed on oxide and polysilicon substrates Test structures were subjected to high current densities of 10e6 A/cm2 and monitored for changes in current resulting from electromigration induced defects. The test station employed in this experiment was subject to current losses which the 5Oftware erroneously interpreted as electromigration failures, thus completing the test
The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep ...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
This paper describes fine-grained Mg containing A1-Si alloys, which have an electromigration resista...
Pure evaporated aluminum interconnects on a flat surface and over topography were subjected to high ...
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become...
A brief review is given of models which propose a correlation between electromigration resistance an...
The reliability of microelectronic systems is often limited by electromigration failure in Al-based ...
The chemical mechanical planarization (CMP) process is critical in fabricating ultra large scale int...
The effects of HCl on trap generation in SiO$\sb2$ film and at Si/SiO$\sb2$ interface at high electr...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
textThe microelectronics industry has been managing the RC delay problem arising from aggressive lin...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Investigation on metallurgical properties and electromigration in AlCu metallizations for VLSI appli...
Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a...
The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep ...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
This paper describes fine-grained Mg containing A1-Si alloys, which have an electromigration resista...
Pure evaporated aluminum interconnects on a flat surface and over topography were subjected to high ...
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become...
A brief review is given of models which propose a correlation between electromigration resistance an...
The reliability of microelectronic systems is often limited by electromigration failure in Al-based ...
The chemical mechanical planarization (CMP) process is critical in fabricating ultra large scale int...
The effects of HCl on trap generation in SiO$\sb2$ film and at Si/SiO$\sb2$ interface at high electr...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
textThe microelectronics industry has been managing the RC delay problem arising from aggressive lin...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Investigation on metallurgical properties and electromigration in AlCu metallizations for VLSI appli...
Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a...
The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep ...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
This paper describes fine-grained Mg containing A1-Si alloys, which have an electromigration resista...