Add to ORKGNMOS processes require a variety of threshold voltages for differing applications. For this experiment, the threshold voltages of NMOS devices were altered by a using several different ion implant doses (none, 1, 2, 4, and 8e12/cm2) of boron. This shifted the threshold voltage in good agreement with literature values [1]
In this paper, we investigates the different dose and tilt HALO implant step in order to characteri...
We report the detection of single ion impacts throughmonitoring of changes in the source-drain curre...
With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielec...
NMOS processes require a variety of threshold voltages for differing applications. For this experime...
Ion implantation is being applied extensively to silicon device technology. Two principle features a...
With the ever-decreasing size of device geometries today, all aspects of processing must allow for p...
A test chip has been designed for experimental use in determining and maintaing the operation of an ...
This paper reports on the threshold adjustment of NMOS transistors by arsenic ion implantation in th...
Silicon oxynitride (SiOxNy) insulators have been obtained by low-energy nitrogen ion implantation in...
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) ...
A review of the principal features of ion implanted transistors is presented. A detailed analysis of...
[[abstract]]Threshold adjustments have been performed on n- and p-channel metal-oxide-semiconductor ...
[[abstract]]© 1988 Elsevier-Incremental threshold voltage controls were achieved for n-channel and p...
The incorporation of nitrogen in silicon has been shown to retard the oxidation growth rate. The pre...
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) ...
In this paper, we investigates the different dose and tilt HALO implant step in order to characteri...
We report the detection of single ion impacts throughmonitoring of changes in the source-drain curre...
With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielec...
NMOS processes require a variety of threshold voltages for differing applications. For this experime...
Ion implantation is being applied extensively to silicon device technology. Two principle features a...
With the ever-decreasing size of device geometries today, all aspects of processing must allow for p...
A test chip has been designed for experimental use in determining and maintaing the operation of an ...
This paper reports on the threshold adjustment of NMOS transistors by arsenic ion implantation in th...
Silicon oxynitride (SiOxNy) insulators have been obtained by low-energy nitrogen ion implantation in...
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) ...
A review of the principal features of ion implanted transistors is presented. A detailed analysis of...
[[abstract]]Threshold adjustments have been performed on n- and p-channel metal-oxide-semiconductor ...
[[abstract]]© 1988 Elsevier-Incremental threshold voltage controls were achieved for n-channel and p...
The incorporation of nitrogen in silicon has been shown to retard the oxidation growth rate. The pre...
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) ...
In this paper, we investigates the different dose and tilt HALO implant step in order to characteri...
We report the detection of single ion impacts throughmonitoring of changes in the source-drain curre...
With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielec...