Add to ORKGUndyed, AZ 1512,and dyed, AZ 1512-SFD, photoresist was coated on aluminum covered oxide topography. The exposure was varied from 7OmJ/cm2 to 130m3/cm2 and the 3.Oum line/space pairs were measured to calculate the exposure latitude. The resist lines were examined over topography for signs of reflective notching. Results showed an increase of the exposure latitude from 9.1% to 9.9% for the dyed resist. The data was inconclusive in determining any improved control of reflective notching with the use of dyed photoresist
Two approaches to prevent pattern collapse of 45 nm photoresist features were explored to create a p...
This paper presents the results of observing colorimetric change obtained by the impact of UV curing...
As lithography moves toward feature sizes of 22 nm and smaller and pushing for applications beyond t...
The process latitude of a resist with a bleachable dye component is investigated theoretically with ...
The goal of this thesis project was to examine whether it is possible to coat a thinner photo-resist...
Positive resist coated wafers were Immersed in a dilute alkaline base developer, such as 5:1 AZ351, ...
Aluminum pattern definition was evaluated using AZ5214E photoresfst 1n conventional posfttve and ima...
The inorganic antireflection coating (AR3-chromium oxide) commonly used on photomask blanks was desi...
A method of determining photoresist image modulation was investigated and utilized, in determining t...
An antireflection coating (ARC) containing polyvinyl alcohol and two dyes was applied to a substrate...
A study was conducted in which a series ofexperiments were performed using three positive photoresis...
Wafertrac processing was used to optimize the photolithographic process of Shipley 812 positive phot...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2008.Includes bibliographica...
Chemically Amplified Advanced Negative Resist for G line application was evaluated under three diffe...
In this study, dry film photoresist was patterned using UV lithography and the sidewall profile was ...
Two approaches to prevent pattern collapse of 45 nm photoresist features were explored to create a p...
This paper presents the results of observing colorimetric change obtained by the impact of UV curing...
As lithography moves toward feature sizes of 22 nm and smaller and pushing for applications beyond t...
The process latitude of a resist with a bleachable dye component is investigated theoretically with ...
The goal of this thesis project was to examine whether it is possible to coat a thinner photo-resist...
Positive resist coated wafers were Immersed in a dilute alkaline base developer, such as 5:1 AZ351, ...
Aluminum pattern definition was evaluated using AZ5214E photoresfst 1n conventional posfttve and ima...
The inorganic antireflection coating (AR3-chromium oxide) commonly used on photomask blanks was desi...
A method of determining photoresist image modulation was investigated and utilized, in determining t...
An antireflection coating (ARC) containing polyvinyl alcohol and two dyes was applied to a substrate...
A study was conducted in which a series ofexperiments were performed using three positive photoresis...
Wafertrac processing was used to optimize the photolithographic process of Shipley 812 positive phot...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2008.Includes bibliographica...
Chemically Amplified Advanced Negative Resist for G line application was evaluated under three diffe...
In this study, dry film photoresist was patterned using UV lithography and the sidewall profile was ...
Two approaches to prevent pattern collapse of 45 nm photoresist features were explored to create a p...
This paper presents the results of observing colorimetric change obtained by the impact of UV curing...
As lithography moves toward feature sizes of 22 nm and smaller and pushing for applications beyond t...