A flexible low frequency measurement system was set up for providing high quality low frequency C-V curves suitable for analysis and a method is described to analyze the low frequency C-V response for surface state density calculations. This method was used to calculate surface densities over a large portion of the band gap for several MOS capacitors
Experimental observations for the In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system in inver...
An IBH personal computer was used es en eutorT\u27l8tic data equlsitlon system for obtaining capacit...
We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is h...
<正> A new technique know as“MOS Constant Current Quasi-static Small-Signsl Technique”by whichq...
A FORTRAN program has been written to manipulate the data obtained from 1 MHZ C—V measurements. This...
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic...
MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wa...
Capacitance-voltage (CV) measurements are used widely as an effective method for Metal-Insulator-Sil...
Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage ...
This work is motivated by the need for test cores for advanced CMOS processes characterization, whi...
A 0.13-μm complementary metal-oxide-semiconductor (CMOS) technology capacitive measuring system has ...
A computer program called CVPLOT, used at RIT to aid in the analysis of metal—oxide—semiconductor (M...
A 90nm CMOS technology has been characterized on the basis of IV and CV measurements. This was feasi...
With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor ...
Capacitance-voltage (C-V) gate characteristics of power metal-oxide-semiconductor field-effect trans...
Experimental observations for the In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system in inver...
An IBH personal computer was used es en eutorT\u27l8tic data equlsitlon system for obtaining capacit...
We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is h...
<正> A new technique know as“MOS Constant Current Quasi-static Small-Signsl Technique”by whichq...
A FORTRAN program has been written to manipulate the data obtained from 1 MHZ C—V measurements. This...
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic...
MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wa...
Capacitance-voltage (CV) measurements are used widely as an effective method for Metal-Insulator-Sil...
Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage ...
This work is motivated by the need for test cores for advanced CMOS processes characterization, whi...
A 0.13-μm complementary metal-oxide-semiconductor (CMOS) technology capacitive measuring system has ...
A computer program called CVPLOT, used at RIT to aid in the analysis of metal—oxide—semiconductor (M...
A 90nm CMOS technology has been characterized on the basis of IV and CV measurements. This was feasi...
With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor ...
Capacitance-voltage (C-V) gate characteristics of power metal-oxide-semiconductor field-effect trans...
Experimental observations for the In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system in inver...
An IBH personal computer was used es en eutorT\u27l8tic data equlsitlon system for obtaining capacit...
We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is h...