Add to ORKGA survey of optical properties of sputtered materials in the spectral range of 145 nm to 800 nm has been performed. The optical constants n and k have been measured using ellipsometric techniques. Four combination materials have been created with the properties suitable for application in Attenuated Phase Shift Mask (APSM) manufacturing. The four combination materials have also been characterized, with the results presented
For many common types of process materials used in the fabrication of infrared microelectronic devic...
A lithography technique called “laser thermal lithography” was proposed for fabricating nanometer-si...
This dissertation is focused on theoretical and experimental studies of optical properties of materi...
The Semiconductor Industry Association Roadmap 2003 has put 157 nm optical lithography as the next g...
The electronic revolution is driven by the circuits and devices fabricated on silicon. Since the inv...
As the microelectronics industry trends toward 157nm lithography and device geometries shrink below ...
ellipsometry (SE) is a non-invasive optical diagnostic that measures the change in polarization of l...
Optical material properties have been studied in a wide wavelength range. Theaim is future use of sp...
The electronic revolution is driven by the circuits and devices fabricated on silicon. Since the inv...
ellipsometry (SE) is a non-invasive optical diagnostic that measures the change in polarization of l...
In the last decade, optically functionalized materials have developed rapidly, from bulk matters to ...
The manufacture of optical coatings, computer disks, as well as advanced electronic multilayered dev...
Amorphous silicon (a-Si) was investigated as a potential masking material at 157nm wavelength. Chara...
For many common types of process materials used in the fabrication of infrared microelectronic devic...
For many common types of process materials used in the fabrication of infrared microelectronic devic...
For many common types of process materials used in the fabrication of infrared microelectronic devic...
A lithography technique called “laser thermal lithography” was proposed for fabricating nanometer-si...
This dissertation is focused on theoretical and experimental studies of optical properties of materi...
The Semiconductor Industry Association Roadmap 2003 has put 157 nm optical lithography as the next g...
The electronic revolution is driven by the circuits and devices fabricated on silicon. Since the inv...
As the microelectronics industry trends toward 157nm lithography and device geometries shrink below ...
ellipsometry (SE) is a non-invasive optical diagnostic that measures the change in polarization of l...
Optical material properties have been studied in a wide wavelength range. Theaim is future use of sp...
The electronic revolution is driven by the circuits and devices fabricated on silicon. Since the inv...
ellipsometry (SE) is a non-invasive optical diagnostic that measures the change in polarization of l...
In the last decade, optically functionalized materials have developed rapidly, from bulk matters to ...
The manufacture of optical coatings, computer disks, as well as advanced electronic multilayered dev...
Amorphous silicon (a-Si) was investigated as a potential masking material at 157nm wavelength. Chara...
For many common types of process materials used in the fabrication of infrared microelectronic devic...
For many common types of process materials used in the fabrication of infrared microelectronic devic...
For many common types of process materials used in the fabrication of infrared microelectronic devic...
A lithography technique called “laser thermal lithography” was proposed for fabricating nanometer-si...
This dissertation is focused on theoretical and experimental studies of optical properties of materi...