International audienceNew paradigms are required in microelectronics when the transistor is in its downscaling limit and integration of materials presenting functional properties not available in classical silicon is one of the promising alternatives. Here, we demonstrate the possibility to grow LaSrMnO (LSMO) functional materials on amorphous substrates with properties close to films grown on single-crystalline substrates using a two-dimensional seed layer. X-ray diffraction and electron backscatter diffraction mapping demonstrate that the CaNbO nanosheet (NS) layer induces epitaxial stabilization of LSMO films with a strong out-of-plane (001) texture, whereas the growth of LSMO films on uncoated glass substrates exhibits a nontextured pol...
International audienceLa0.67Sr0.33MnO3 (LSMO) thin films have been grown by pulsed laser deposition ...
International audienceAbstract La 0.67 Sr 0.33 MnO 3 (LSMO) thin films have been grown by pulsed las...
As conventional electronics approaches its fundamental limits, new paradigms are re- quired. Integra...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
The manganite LSMO films were successfully grown on glass substrates without any additional buffer l...
We report on the structure and transport properties of nanocrystalline manganite La0.7Sr0.3MnO3 (LSM...
International audienceLa0.67Sr0.33MnO3 (LSMO) thin films have been grown by pulsed laser deposition ...
International audienceAbstract La 0.67 Sr 0.33 MnO 3 (LSMO) thin films have been grown by pulsed las...
International audienceLa0.67Sr0.33MnO3 (LSMO) thin films have been grown by pulsed laser deposition ...
International audienceAbstract La 0.67 Sr 0.33 MnO 3 (LSMO) thin films have been grown by pulsed las...
As conventional electronics approaches its fundamental limits, new paradigms are re- quired. Integra...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
International audienceNew paradigms are required in microelectronics when the transistor is in its d...
The manganite LSMO films were successfully grown on glass substrates without any additional buffer l...
We report on the structure and transport properties of nanocrystalline manganite La0.7Sr0.3MnO3 (LSM...
International audienceLa0.67Sr0.33MnO3 (LSMO) thin films have been grown by pulsed laser deposition ...
International audienceAbstract La 0.67 Sr 0.33 MnO 3 (LSMO) thin films have been grown by pulsed las...
International audienceLa0.67Sr0.33MnO3 (LSMO) thin films have been grown by pulsed laser deposition ...
International audienceAbstract La 0.67 Sr 0.33 MnO 3 (LSMO) thin films have been grown by pulsed las...
As conventional electronics approaches its fundamental limits, new paradigms are re- quired. Integra...