International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam (FIB) sections is developed in order to combine isotopic imaging by Nanoscale Secondary Ion Mass Spectrometry (NanoSIMS) of micrometer-sized grains with other nanoscale imaging techniques, such as Transmission Electron Microscopy. In order to maximize the accuracy, sensitivity, precision and reproducibility of D/H ratios at the micrometer-size, while minimizing the surface contamination at the same time, we explored all instrumental parameters known to influence the measurement of D/H ratios in situ. Optimal conditions were found to be obtained with the use of (i) a Cs$^+$ ion source and detection of H$^-$ and D$^-$at low mass resolving powe...
Abstract There are growing demands for integrated study of isotopes, trace elements and crystallogra...
Secondary ion mass spectrometry (SIMS) has wide application for in situ geochronology, trace element...
The transition to semiconductor design nodes below 100 nm will create high demands on metrology solu...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
Over the past 15 years, with materials research moving into sub-micrometer-dimensions, focused ion b...
High-resolution SIMS analysis can be used to explore a wide range of problems in material science an...
There are growing demands for integrated study of isotopes, trace elements and crystallography of mi...
The NanoSIMS 50 combines unprecedented spatial resolution (as good as 50 nm) with ultra-high sensiti...
Secondary ion mass spectrometry (SIMS) has wide application for in situ geochronology, trace element...
Abstract There are growing demands for integrated study of isotopes, trace elements and crystallogra...
Secondary ion mass spectrometry (SIMS) has wide application for in situ geochronology, trace element...
The transition to semiconductor design nodes below 100 nm will create high demands on metrology solu...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
International audienceThe D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam...
Over the past 15 years, with materials research moving into sub-micrometer-dimensions, focused ion b...
High-resolution SIMS analysis can be used to explore a wide range of problems in material science an...
There are growing demands for integrated study of isotopes, trace elements and crystallography of mi...
The NanoSIMS 50 combines unprecedented spatial resolution (as good as 50 nm) with ultra-high sensiti...
Secondary ion mass spectrometry (SIMS) has wide application for in situ geochronology, trace element...
Abstract There are growing demands for integrated study of isotopes, trace elements and crystallogra...
Secondary ion mass spectrometry (SIMS) has wide application for in situ geochronology, trace element...
The transition to semiconductor design nodes below 100 nm will create high demands on metrology solu...