Optical doping of AlxGa1-xN compounds by ion implantation of Tm ions

AlxGa1-xN (0 axis for samples with AlN contents of 0.15 and 0.77 suggest a relation between the AlN content and Tm specific sites in the lattice. Rapid thermal annealing treatments under N2 ambient were performed to remove damage and promote optical activation of rare earth intra-4fn transitions. After annealing the observed intraionic emissions of Tm3+ ions were characterized by photoluminescence. © 2012 American Institute of Physics.publishe