PROCESS FOR FABRICATING A HETEROSTRUCTURE COMPRISING A CONDUCTIVE STRUCTURE AND A SEMICONDUCTOR STRUCTURE AND INCLUDING A STEP OF ELECTRICAL DISCHARGE MACHINING

The subject of the invention is a process for fabricating at least one elementary heterostructure comprising: producing a heterostructure including at least one semiconductor structure of resistivity higher than or equal to 1 Ω.cm, said structure being located between two electrically conductive structures of resistivity lower than or equal to 0.1 Ω.cm; and cutting said heterostructure by electrical discharge machining so as to define at least said elementary heterostructure; the thickness of the semiconductor structure being smaller than about 1/10th of the thickness of at least one of said electrically conductive structures or of the total thickness of said electrically conductive structures