We study the effect of external noise on resistive switching. Experimental results on a manganite sample are presented showing that there is an optimal noise amplitude that maximizes the contrast between high and low resistive states. By means of numerical simulations, we study the causes underlying the observed behavior. We find that experimental results can be related to general characteristics of the equations governing the system dynamics.Fil: Patterson, Germán Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Tecnológico de Buenos Aires; ArgentinaFil: Fierens, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Tecnológico de Buenos Aires; ArgentinaFil:...
We investigate the electrically-driven switching between low and high resistance states in antiferro...
The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time ...
The transport properties of manganite thin films characterized by a weak-localization transition hav...
In this paper we study the role of noise in the context of resistive switching phenomena by means of...
El objetivo de esta Tesis es el de estudiar el efecto del ruido eléctrico y la temperatura en sistem...
Abstract We extend results by Stotland and Di Ventra [1] on the phenomenon of resistive switching ai...
We investigate the electric-pulse-induced resistance switching in manganite systems. We find a "comp...
In this study, the possibilities of noise tailoring in filamentary resistive switching memory device...
The excess noise observed during the resistive transition of a superconducting material can be used ...
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When ...
We study the effect of internal and external noise on the phenomenon of resistive switching. We cons...
We present a set of experimental results concerning the current noise produced during the resistive ...
Resistive switching (RS) is studied in a memristor based on a ZrO2(Y)/Ta2O5 stack under a white Gaus...
An original model for the interpretation of the noise produced during the resistive transition of di...
An original model for the interpretation of the noise produced during the resistive transition of di...
We investigate the electrically-driven switching between low and high resistance states in antiferro...
The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time ...
The transport properties of manganite thin films characterized by a weak-localization transition hav...
In this paper we study the role of noise in the context of resistive switching phenomena by means of...
El objetivo de esta Tesis es el de estudiar el efecto del ruido eléctrico y la temperatura en sistem...
Abstract We extend results by Stotland and Di Ventra [1] on the phenomenon of resistive switching ai...
We investigate the electric-pulse-induced resistance switching in manganite systems. We find a "comp...
In this study, the possibilities of noise tailoring in filamentary resistive switching memory device...
The excess noise observed during the resistive transition of a superconducting material can be used ...
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When ...
We study the effect of internal and external noise on the phenomenon of resistive switching. We cons...
We present a set of experimental results concerning the current noise produced during the resistive ...
Resistive switching (RS) is studied in a memristor based on a ZrO2(Y)/Ta2O5 stack under a white Gaus...
An original model for the interpretation of the noise produced during the resistive transition of di...
An original model for the interpretation of the noise produced during the resistive transition of di...
We investigate the electrically-driven switching between low and high resistance states in antiferro...
The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time ...
The transport properties of manganite thin films characterized by a weak-localization transition hav...