Transport Phenomena for Development Inductive Elements Based on Silicon Wires

Conductance and magnetoresistance of Si whiskers with diameters 5-40 µm doped with boron impurity were investigated in temperature range 4.2 ÷ 300 К, frequency range 1÷ 10 Hz and magnetic fields with intensity up to 14 Т by method of impedance spectroscopy. Hopping conductance on impurity states was shown to be realized in the crystals in low temperature region. The studies allow us to obtain parameters of hopping conduction. On the basis of experimental results a miniature inductive element was created using silicon wire