© 2016 Published by Elsevier B.V. Strain-dependent half-metallicity of two-bilayer GaN nanosheets (NSs) with fluorinated Ga atoms is studied using density-functional theory. Our results demonstrate that the band gaps in spin-up states and half-metallic gaps vary with biaxial strain and uniaxial compressive strain along the zigzag direction, while the metallic behaviors in spin-down states remain regardless of strain. However, biaxial strain has a better effect on the half-metallicity. Semifluorinated GaN NSs may undergo a structural phase transition from wurtzite to graphite-like phase at high biaxial tension. Therefore, biaxial strain tuning half-metallicity efficiently could provide a viable route to GaN-based spintronic nanodevices
We present an ab initio tooled study on magnetic and electronic properties of 3d transition metals m...
Recently, two-dimensional (2D) BCN, an in-plane heterostructure formed by graphene and hexagonal bor...
The effect of strain on the valence-band structure of (11math2) semipolar InGaN grown on GaN substra...
© 2016 Elsevier Ltd Through density-functional theory calculations, we investigated the half-metalli...
Based on density functional theory, we have investigated the effects of in-plane biaxial strain on t...
Based on density functional theory, we have investigated the effects of in-plane biaxial strain on t...
© the Owner Societies 2015. Density-functional theory calculations are performed to investigate the ...
New structures of bilayer GaN displaying buckling are revealed, and their structural and electronic ...
New structures of bilayer GaN displaying buckling are revealed, and their structural and electronic ...
The effect of strain on the valence-band structure of (11math2) semipolar InGaN grown on GaN substra...
First-principles calculations relating to the atomic structure and electronic properties of 101̄3 Ga...
First-principles calculations relating to the atomic structure and electronic properties of 101̄3 Ga...
In GaN and other group III nitrides the considerable lattice mismatch with the substrates normally ...
National 973 Program of China [2007CB209702, 2011CB935903]; National Natural Science Foundation of C...
Bandgap engineering has been a powerful technique for manipulating the electronic and optical proper...
We present an ab initio tooled study on magnetic and electronic properties of 3d transition metals m...
Recently, two-dimensional (2D) BCN, an in-plane heterostructure formed by graphene and hexagonal bor...
The effect of strain on the valence-band structure of (11math2) semipolar InGaN grown on GaN substra...
© 2016 Elsevier Ltd Through density-functional theory calculations, we investigated the half-metalli...
Based on density functional theory, we have investigated the effects of in-plane biaxial strain on t...
Based on density functional theory, we have investigated the effects of in-plane biaxial strain on t...
© the Owner Societies 2015. Density-functional theory calculations are performed to investigate the ...
New structures of bilayer GaN displaying buckling are revealed, and their structural and electronic ...
New structures of bilayer GaN displaying buckling are revealed, and their structural and electronic ...
The effect of strain on the valence-band structure of (11math2) semipolar InGaN grown on GaN substra...
First-principles calculations relating to the atomic structure and electronic properties of 101̄3 Ga...
First-principles calculations relating to the atomic structure and electronic properties of 101̄3 Ga...
In GaN and other group III nitrides the considerable lattice mismatch with the substrates normally ...
National 973 Program of China [2007CB209702, 2011CB935903]; National Natural Science Foundation of C...
Bandgap engineering has been a powerful technique for manipulating the electronic and optical proper...
We present an ab initio tooled study on magnetic and electronic properties of 3d transition metals m...
Recently, two-dimensional (2D) BCN, an in-plane heterostructure formed by graphene and hexagonal bor...
The effect of strain on the valence-band structure of (11math2) semipolar InGaN grown on GaN substra...